Calculation of Impurity Diffusion in Siiicon
The paper contains information about analytical solutions of diffusion equation which have been obtained for the first time. An example of calculation of diffusion processes in silicon during manufacturing of semiconductor devices is considered in the paper. Mathematical functions suitable for obtai...
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| Main Author: | V. А. Bondarev |
|---|---|
| Format: | Article |
| Language: | Russian |
| Published: |
Belarusian National Technical University
2004-08-01
|
| Series: | Известия высших учебных заведений и энергетических объединенний СНГ: Энергетика |
| Online Access: | https://energy.bntu.by/jour/article/view/1155 |
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