Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs

This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead...

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Bibliographic Details
Main Authors: Chuanxue Sun, Xiaoyu Dou, Zhichao Du, Haitao Dong, Xiaopeng Li, Pengpeng Sang, Xuepeng Zhan, Fei Mo, Jixuan Wu, Jiezhi Chen
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Micromachines
Subjects:
elevated-metal metal-oxide (EMMO)
IGZO
positive bias stress (PBS)
oxygen vacancies
Online Access:https://www.mdpi.com/2072-666X/16/2/141
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Summary:This study explores the impact of oxygen vacancy defects on elevated-metal metal-oxide (EMMO) IGZO TFTs under positive bias stress (PBS) using TCAD and DFT simulation. Findings reveal that oxygen vacancies accumulating at the channel/passivation layer interface and within the channel under PBS lead to negative threshold voltage shifts and reduced mobility. Additionally, higher tail state densities contribute to a positive Vth shift. These results provide important insights into the defect-related reliability of EMMO IGZO TFTs, guiding the design of more reliable devices.
ISSN:2072-666X

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