Study of Mn4Si7 Silicide Alloys Produced Under Different Conditions Using an X-ray Diffractometer

Mn4Si7 silicide crystals obtained by hot isostatic pressing (HIP) and diffusion methods were studied. As a result of the research, 11 peaks were identified in the Mn4Si7 crystal obtained by the HIP method, and 14 peaks in the Mn4Si7 crystal obtained by the diffusion method. The crystal size of Mn4S...

Full description

Saved in:
Bibliographic Details
Main Authors: B.D. Igamov, A.I. Kamardin, D.Kh. Nabiev, G.T. Imanova, I.R. Bekpulatov, I.Kh. Turapov, N.E. Norbutaev
Format: Article
Language:English
Published: Academician Ye.A. Buketov Karaganda University 2025-06-01
Series:Қарағанды университетінің хабаршысы. Физика сериясы
Subjects:
Online Access:https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/841
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1849421957744820224
author B.D. Igamov
A.I. Kamardin
D.Kh. Nabiev
G.T. Imanova
I.R. Bekpulatov
I.Kh. Turapov
N.E. Norbutaev
author_facet B.D. Igamov
A.I. Kamardin
D.Kh. Nabiev
G.T. Imanova
I.R. Bekpulatov
I.Kh. Turapov
N.E. Norbutaev
author_sort B.D. Igamov
collection DOAJ
description Mn4Si7 silicide crystals obtained by hot isostatic pressing (HIP) and diffusion methods were studied. As a result of the research, 11 peaks were identified in the Mn4Si7 crystal obtained by the HIP method, and 14 peaks in the Mn4Si7 crystal obtained by the diffusion method. The crystal size of Mn4Si7 silicide (DHIP) was established from 8.8∙10–9 m to 3.6∙10–8 m, (DDiff) from 6.2∙10–10 m to 9.1∙10–8 m. It has been established that the lattice tension between the atoms of the Mn4Si7 silicide crystal (εHIP) varies from 0.01 to 0.41, (εDiff) from 0.31 to 3.71. The dislocation density on the crystal surface (δHIP) turned out to be from 3.5∙1010 to 3.2∙1012, (δDiff) from 1∙1011 to 3.2∙1014. The degree of crystallization of Mn4Si7 silicide obtained by the (HIP) method is 7.02 %, the degree of amorphy is 92.98 %. It has been established that the Mn4Si7 silicide obtained by the diffusion method has a degree of crystallization of 9.3 % and a degree of amorphism of 90.7 %. (COD-1530134) (d). It has been established that the degree of crystallization of high-manganese silicide Mn4Si7 is low, and the degree of amorphy is high due to the fact that Mn and Si are bound in a non-stoichiometric state.
format Article
id doaj-art-52df3e9c413f4feb9ace0f9692121cfd
institution Kabale University
issn 2518-7198
2663-5089
language English
publishDate 2025-06-01
publisher Academician Ye.A. Buketov Karaganda University
record_format Article
series Қарағанды университетінің хабаршысы. Физика сериясы
spelling doaj-art-52df3e9c413f4feb9ace0f9692121cfd2025-08-20T03:31:20ZengAcademician Ye.A. Buketov Karaganda UniversityҚарағанды университетінің хабаршысы. Физика сериясы2518-71982663-50892025-06-0111830210.31489/2025ph2/27-34Study of Mn4Si7 Silicide Alloys Produced Under Different Conditions Using an X-ray DiffractometerB.D. IgamovA.I. KamardinD.Kh. NabievG.T. ImanovaI.R. BekpulatovI.Kh. TurapovN.E. Norbutaev Mn4Si7 silicide crystals obtained by hot isostatic pressing (HIP) and diffusion methods were studied. As a result of the research, 11 peaks were identified in the Mn4Si7 crystal obtained by the HIP method, and 14 peaks in the Mn4Si7 crystal obtained by the diffusion method. The crystal size of Mn4Si7 silicide (DHIP) was established from 8.8∙10–9 m to 3.6∙10–8 m, (DDiff) from 6.2∙10–10 m to 9.1∙10–8 m. It has been established that the lattice tension between the atoms of the Mn4Si7 silicide crystal (εHIP) varies from 0.01 to 0.41, (εDiff) from 0.31 to 3.71. The dislocation density on the crystal surface (δHIP) turned out to be from 3.5∙1010 to 3.2∙1012, (δDiff) from 1∙1011 to 3.2∙1014. The degree of crystallization of Mn4Si7 silicide obtained by the (HIP) method is 7.02 %, the degree of amorphy is 92.98 %. It has been established that the Mn4Si7 silicide obtained by the diffusion method has a degree of crystallization of 9.3 % and a degree of amorphism of 90.7 %. (COD-1530134) (d). It has been established that the degree of crystallization of high-manganese silicide Mn4Si7 is low, and the degree of amorphy is high due to the fact that Mn and Si are bound in a non-stoichiometric state. https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/841diffusioncrystallization,nonstoichiometric,dislocation densitylattice tensionamorphous
spellingShingle B.D. Igamov
A.I. Kamardin
D.Kh. Nabiev
G.T. Imanova
I.R. Bekpulatov
I.Kh. Turapov
N.E. Norbutaev
Study of Mn4Si7 Silicide Alloys Produced Under Different Conditions Using an X-ray Diffractometer
Қарағанды университетінің хабаршысы. Физика сериясы
diffusion
crystallization,
nonstoichiometric,
dislocation density
lattice tension
amorphous
title Study of Mn4Si7 Silicide Alloys Produced Under Different Conditions Using an X-ray Diffractometer
title_full Study of Mn4Si7 Silicide Alloys Produced Under Different Conditions Using an X-ray Diffractometer
title_fullStr Study of Mn4Si7 Silicide Alloys Produced Under Different Conditions Using an X-ray Diffractometer
title_full_unstemmed Study of Mn4Si7 Silicide Alloys Produced Under Different Conditions Using an X-ray Diffractometer
title_short Study of Mn4Si7 Silicide Alloys Produced Under Different Conditions Using an X-ray Diffractometer
title_sort study of mn4si7 silicide alloys produced under different conditions using an x ray diffractometer
topic diffusion
crystallization,
nonstoichiometric,
dislocation density
lattice tension
amorphous
url https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/841
work_keys_str_mv AT bdigamov studyofmn4si7silicidealloysproducedunderdifferentconditionsusinganxraydiffractometer
AT aikamardin studyofmn4si7silicidealloysproducedunderdifferentconditionsusinganxraydiffractometer
AT dkhnabiev studyofmn4si7silicidealloysproducedunderdifferentconditionsusinganxraydiffractometer
AT gtimanova studyofmn4si7silicidealloysproducedunderdifferentconditionsusinganxraydiffractometer
AT irbekpulatov studyofmn4si7silicidealloysproducedunderdifferentconditionsusinganxraydiffractometer
AT ikhturapov studyofmn4si7silicidealloysproducedunderdifferentconditionsusinganxraydiffractometer
AT nenorbutaev studyofmn4si7silicidealloysproducedunderdifferentconditionsusinganxraydiffractometer