Ferroelectric memory: state-of-the-art manufacturing and research
Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. Ferroelectric memory FRAM has been considered as one of the emerging memory t...
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| Format: | Article |
| Language: | Russian |
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MIREA - Russian Technological University
2020-10-01
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| Series: | Российский технологический журнал |
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| Online Access: | https://www.rtj-mirea.ru/jour/article/view/249 |
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| author | D. A. Abdullaev R. A. Milovanov R. L. Volkov N. I. Borgardt A. N. Lantsev K. A. Vorotilov A. S. Sigov |
| author_facet | D. A. Abdullaev R. A. Milovanov R. L. Volkov N. I. Borgardt A. N. Lantsev K. A. Vorotilov A. S. Sigov |
| author_sort | D. A. Abdullaev |
| collection | DOAJ |
| description | Semiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. Ferroelectric memory FRAM has been considered as one of the emerging memory technologies for over 20 years. FRAM uses polarization switching that provides low power consumption, nonvolatility, high speed and endurance, robust data retention, and resistance to data corruption via electric, magnetic fields and radiation. Despite the advantages, market share held by FRAM manufacturers is insignificant due to scaling challenges. State-of-the-art FRAM manufacturing is studied in this paper. Ferroelectric capacitors and memory cells made by main commercial FRAM manufactures (Texas Instruments, Cypress Semiconductor, Fujitsu и Lapis Semiconductor) are explored. All memory cells are based on the lead zirconate titanate PZT capacitor with the thickness of about 70 nm and IrOx/Ir or Pt electrodes. The leading FRAM technology remains the 130 nm node CMOS process developed at Texas Instruments fabs. New approaches to further scaling and new devices based on ferroelectrics are reviewed, including binary ferroelectrics deposited by ALD techniques, piezoelectronic transistors, ferroelectric/2D-semiconductor transistor structures, and others. Whether FRAM technology will be able to resolve one of the main contradictions between a high-speed processor and a relatively slow nonvolatile memory depends on the success of the new technologies integration. |
| format | Article |
| id | doaj-art-52c68c3244374809bef65525df2292a2 |
| institution | Kabale University |
| issn | 2500-316X |
| language | Russian |
| publishDate | 2020-10-01 |
| publisher | MIREA - Russian Technological University |
| record_format | Article |
| series | Российский технологический журнал |
| spelling | doaj-art-52c68c3244374809bef65525df2292a22025-02-03T11:45:49ZrusMIREA - Russian Technological UniversityРоссийский технологический журнал2500-316X2020-10-0185446710.32362/2500-316X-2020-8-5-44-67223Ferroelectric memory: state-of-the-art manufacturing and researchD. A. Abdullaev0R. A. Milovanov1R. L. Volkov2N. I. Borgardt3A. N. Lantsev4K. A. Vorotilov5A. S. Sigov6MIREA – Russian Technological University; Institute of Nanotechnology of Microelectronics of the Russian Academy of SciencesMIREA – Russian Technological University; Institute of Nanotechnology of Microelectronics of the Russian Academy of SciencesNational Research University of Electronic Technology – MIETNational Research University of Electronic Technology – MIETCJSC ScanMIREA – Russian Technological UniversityMIREA – Russian Technological UniversitySemiconductor industry calls for emerging memory, demonstrating high speed (like SRAM or DRAM), nonvolatility (like Flash NAND), high endurance and density, good scalability, reduced energy consumption and reasonable cost. Ferroelectric memory FRAM has been considered as one of the emerging memory technologies for over 20 years. FRAM uses polarization switching that provides low power consumption, nonvolatility, high speed and endurance, robust data retention, and resistance to data corruption via electric, magnetic fields and radiation. Despite the advantages, market share held by FRAM manufacturers is insignificant due to scaling challenges. State-of-the-art FRAM manufacturing is studied in this paper. Ferroelectric capacitors and memory cells made by main commercial FRAM manufactures (Texas Instruments, Cypress Semiconductor, Fujitsu и Lapis Semiconductor) are explored. All memory cells are based on the lead zirconate titanate PZT capacitor with the thickness of about 70 nm and IrOx/Ir or Pt electrodes. The leading FRAM technology remains the 130 nm node CMOS process developed at Texas Instruments fabs. New approaches to further scaling and new devices based on ferroelectrics are reviewed, including binary ferroelectrics deposited by ALD techniques, piezoelectronic transistors, ferroelectric/2D-semiconductor transistor structures, and others. Whether FRAM technology will be able to resolve one of the main contradictions between a high-speed processor and a relatively slow nonvolatile memory depends on the success of the new technologies integration.https://www.rtj-mirea.ru/jour/article/view/249non-volatile memoryferroelectric memoryintegrated circuitmemory celllead zirconate titanatehafnium oxide |
| spellingShingle | D. A. Abdullaev R. A. Milovanov R. L. Volkov N. I. Borgardt A. N. Lantsev K. A. Vorotilov A. S. Sigov Ferroelectric memory: state-of-the-art manufacturing and research Российский технологический журнал non-volatile memory ferroelectric memory integrated circuit memory cell lead zirconate titanate hafnium oxide |
| title | Ferroelectric memory: state-of-the-art manufacturing and research |
| title_full | Ferroelectric memory: state-of-the-art manufacturing and research |
| title_fullStr | Ferroelectric memory: state-of-the-art manufacturing and research |
| title_full_unstemmed | Ferroelectric memory: state-of-the-art manufacturing and research |
| title_short | Ferroelectric memory: state-of-the-art manufacturing and research |
| title_sort | ferroelectric memory state of the art manufacturing and research |
| topic | non-volatile memory ferroelectric memory integrated circuit memory cell lead zirconate titanate hafnium oxide |
| url | https://www.rtj-mirea.ru/jour/article/view/249 |
| work_keys_str_mv | AT daabdullaev ferroelectricmemorystateoftheartmanufacturingandresearch AT ramilovanov ferroelectricmemorystateoftheartmanufacturingandresearch AT rlvolkov ferroelectricmemorystateoftheartmanufacturingandresearch AT niborgardt ferroelectricmemorystateoftheartmanufacturingandresearch AT anlantsev ferroelectricmemorystateoftheartmanufacturingandresearch AT kavorotilov ferroelectricmemorystateoftheartmanufacturingandresearch AT assigov ferroelectricmemorystateoftheartmanufacturingandresearch |