A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors
Photodetectors (PDs) are crucial in modern society as they enable the detection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used to create a wide range of PDs that play critical roles in enabling various applications and technolo...
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| Language: | English |
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Elsevier
2024-12-01
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| Series: | Chip |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S270947232400025X |
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| author | Xinyu Wang Die Wang Yuchen Tian Jing Guo Jinshui Miao Weida Hu Hailu Wang Kang Liu Lei Shao Saifei Gou Xiangqi Dong Hesheng Su Chuming Sheng Yuxuan Zhu Zhejia Zhang Jinshu Zhang Qicheng Sun Zihan Xu Peng Zhou Honglei Chen Wenzhong Bao |
| author_facet | Xinyu Wang Die Wang Yuchen Tian Jing Guo Jinshui Miao Weida Hu Hailu Wang Kang Liu Lei Shao Saifei Gou Xiangqi Dong Hesheng Su Chuming Sheng Yuxuan Zhu Zhejia Zhang Jinshu Zhang Qicheng Sun Zihan Xu Peng Zhou Honglei Chen Wenzhong Bao |
| author_sort | Xinyu Wang |
| collection | DOAJ |
| description | Photodetectors (PDs) are crucial in modern society as they enable the detection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used to create a wide range of PDs that play critical roles in enabling various applications and technologies. Image sensor technology has been hindered due to the lack of a universal system that can integrate all types of PDs with silicon-based readout integrated circuits (ROICs). To address this issue, we conducted experiments adopting two-dimensional materials as an example. High-performance MoS2-/MoTe2-based PDs were fabricated in the current work and the most suitable ROICs were identified to pair with them. This established a solid foundation for further researches in the field of image sensors. We developed and implemented a versatile testing system that uses a printed circuit board to connect the PD and ROIC. After the ROIC generates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce a high-quality image that is visible to the naked eye. This universal system can be used with a wide range of PD and ROIC types made from different materials, making it highly convenient for diverse testing applications and the development of diverse image sensor types. This robust new platform is expected to spur further innovation and advancements in this rapidly developing field. |
| format | Article |
| id | doaj-art-528021fea43d4df6bd87057cd4548c63 |
| institution | Kabale University |
| issn | 2709-4723 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Chip |
| spelling | doaj-art-528021fea43d4df6bd87057cd4548c632024-12-28T05:23:05ZengElsevierChip2709-47232024-12-0134100107A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductorsXinyu Wang0Die Wang1Yuchen Tian2Jing Guo3Jinshui Miao4Weida Hu5Hailu Wang6Kang Liu7Lei Shao8Saifei Gou9Xiangqi Dong10Hesheng Su11Chuming Sheng12Yuxuan Zhu13Zhejia Zhang14Jinshu Zhang15Qicheng Sun16Zihan Xu17Peng Zhou18Honglei Chen19Wenzhong Bao20State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; Corresponding authors.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaSchool of Electronic Information, Soochow University, Suzhou 215006, China; Corresponding authors.State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, ChinaShenzhen Six Carbon Technology, Shenzhen 518055, ChinaState Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China; Shaoxin Laboratory, Shaoxing 312000, ChinaState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; Corresponding authors.State Key Laboratory of Integrated Chips and Systems, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China; Shaoxin Laboratory, Shaoxing 312000, China; Corresponding authors.Photodetectors (PDs) are crucial in modern society as they enable the detection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used to create a wide range of PDs that play critical roles in enabling various applications and technologies. Image sensor technology has been hindered due to the lack of a universal system that can integrate all types of PDs with silicon-based readout integrated circuits (ROICs). To address this issue, we conducted experiments adopting two-dimensional materials as an example. High-performance MoS2-/MoTe2-based PDs were fabricated in the current work and the most suitable ROICs were identified to pair with them. This established a solid foundation for further researches in the field of image sensors. We developed and implemented a versatile testing system that uses a printed circuit board to connect the PD and ROIC. After the ROIC generates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce a high-quality image that is visible to the naked eye. This universal system can be used with a wide range of PD and ROIC types made from different materials, making it highly convenient for diverse testing applications and the development of diverse image sensor types. This robust new platform is expected to spur further innovation and advancements in this rapidly developing field.http://www.sciencedirect.com/science/article/pii/S270947232400025XPhotodetectorReadout integrated circuitAlgorithmImage sensor |
| spellingShingle | Xinyu Wang Die Wang Yuchen Tian Jing Guo Jinshui Miao Weida Hu Hailu Wang Kang Liu Lei Shao Saifei Gou Xiangqi Dong Hesheng Su Chuming Sheng Yuxuan Zhu Zhejia Zhang Jinshu Zhang Qicheng Sun Zihan Xu Peng Zhou Honglei Chen Wenzhong Bao A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors Chip Photodetector Readout integrated circuit Algorithm Image sensor |
| title | A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors |
| title_full | A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors |
| title_fullStr | A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors |
| title_full_unstemmed | A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors |
| title_short | A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors |
| title_sort | universal optoelectronic imaging platform with wafer scale integration of two dimensional semiconductors |
| topic | Photodetector Readout integrated circuit Algorithm Image sensor |
| url | http://www.sciencedirect.com/science/article/pii/S270947232400025X |
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