Switching and memory effects in thin film disoder chalcoginide semiconductors
The possibility of creation of thin film memory elements and threshold switching elements on the base of one chalcogenide - tellurium is analyzed in the proposed article.
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| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/1075 |
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| _version_ | 1849398401374879744 |
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| author | B. S. Kolosnitcin E. F. Troyan |
| author_facet | B. S. Kolosnitcin E. F. Troyan |
| author_sort | B. S. Kolosnitcin |
| collection | DOAJ |
| description | The possibility of creation of thin film memory elements and threshold switching elements on the base of one chalcogenide - tellurium is analyzed in the proposed article. |
| format | Article |
| id | doaj-art-5210319c15744f14b08ae21ba2aa0f0a |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-5210319c15744f14b08ae21ba2aa0f0a2025-08-20T03:38:38ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010225301074Switching and memory effects in thin film disoder chalcoginide semiconductorsB. S. Kolosnitcin0E. F. Troyan1Belarusian state university of informatics and radioelectronicsCJSC «New european innovative technologies»The possibility of creation of thin film memory elements and threshold switching elements on the base of one chalcogenide - tellurium is analyzed in the proposed article.https://doklady.bsuir.by/jour/article/view/1075thin filmschalcogenide alloysswitching and memory effects |
| spellingShingle | B. S. Kolosnitcin E. F. Troyan Switching and memory effects in thin film disoder chalcoginide semiconductors Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki thin films chalcogenide alloys switching and memory effects |
| title | Switching and memory effects in thin film disoder chalcoginide semiconductors |
| title_full | Switching and memory effects in thin film disoder chalcoginide semiconductors |
| title_fullStr | Switching and memory effects in thin film disoder chalcoginide semiconductors |
| title_full_unstemmed | Switching and memory effects in thin film disoder chalcoginide semiconductors |
| title_short | Switching and memory effects in thin film disoder chalcoginide semiconductors |
| title_sort | switching and memory effects in thin film disoder chalcoginide semiconductors |
| topic | thin films chalcogenide alloys switching and memory effects |
| url | https://doklady.bsuir.by/jour/article/view/1075 |
| work_keys_str_mv | AT bskolosnitcin switchingandmemoryeffectsinthinfilmdisoderchalcoginidesemiconductors AT eftroyan switchingandmemoryeffectsinthinfilmdisoderchalcoginidesemiconductors |