Through-silicon-via formation of 3D electronic modules by laser radiation
Laser heating is a promising method for through-silicon-via (TSV) formation in assembling highdensity 3D electronic modules due to its high specific energy and local heating ability. Using laser radiation for the formation of TSV makes it possible to reduce its diameter, indirectly incre...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2021-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/3078 |
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| author | V. L. Lanin V. T Pham A. I. Lappo |
| author_facet | V. L. Lanin V. T Pham A. I. Lappo |
| author_sort | V. L. Lanin |
| collection | DOAJ |
| description | Laser heating is a promising method for through-silicon-via (TSV) formation in assembling highdensity 3D electronic modules due to its high specific energy and local heating ability. Using laser radiation for the formation of TSV makes it possible to reduce its diameter, indirectly increases the density of elements in 3D electrical modules. Laser system selection depends on the physical and mechanical properties of the processed materials and on the technical requirements for laserprocessing. The reflectivity of most materials increases with the laser wavelength. It was found that with an increase in the initial temperature of the substrate, the TSV taper becomes larger. Simulation was performed in COMSOL Multiphysics 5.6 to conduct thermal distribution during TSV laser formation. By modeling thermal fields in the COMSOL Multiphysics 5.6 software for laser processing of silicon substrates and experimental studies, the parameters of laser radiation have been optimized to obtain a minimum hole taper coefficient in the substrates of 3D electronic modules. The optimal duration of exposure to laser radiation with a wavelength of 10.64 microns is less than 2 s with holes taper 0.1–0.2. |
| format | Article |
| id | doaj-art-50dde03f05a44be5a58c13ec2446f11d |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2021-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-50dde03f05a44be5a58c13ec2446f11d2025-08-20T04:00:41ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482021-06-01193586510.35596/1729-7648-2021-19-3-58-651694Through-silicon-via formation of 3D electronic modules by laser radiationV. L. Lanin0V. T Pham1A. I. Lappo2Belarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsBelarusian State University of Informatics and RadioelectronicsLaser heating is a promising method for through-silicon-via (TSV) formation in assembling highdensity 3D electronic modules due to its high specific energy and local heating ability. Using laser radiation for the formation of TSV makes it possible to reduce its diameter, indirectly increases the density of elements in 3D electrical modules. Laser system selection depends on the physical and mechanical properties of the processed materials and on the technical requirements for laserprocessing. The reflectivity of most materials increases with the laser wavelength. It was found that with an increase in the initial temperature of the substrate, the TSV taper becomes larger. Simulation was performed in COMSOL Multiphysics 5.6 to conduct thermal distribution during TSV laser formation. By modeling thermal fields in the COMSOL Multiphysics 5.6 software for laser processing of silicon substrates and experimental studies, the parameters of laser radiation have been optimized to obtain a minimum hole taper coefficient in the substrates of 3D electronic modules. The optimal duration of exposure to laser radiation with a wavelength of 10.64 microns is less than 2 s with holes taper 0.1–0.2.https://doklady.bsuir.by/jour/article/view/3078laser radiationsilicon substratehole taper coefficientthermal field simulationinitial temperature |
| spellingShingle | V. L. Lanin V. T Pham A. I. Lappo Through-silicon-via formation of 3D electronic modules by laser radiation Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki laser radiation silicon substrate hole taper coefficient thermal field simulation initial temperature |
| title | Through-silicon-via formation of 3D electronic modules by laser radiation |
| title_full | Through-silicon-via formation of 3D electronic modules by laser radiation |
| title_fullStr | Through-silicon-via formation of 3D electronic modules by laser radiation |
| title_full_unstemmed | Through-silicon-via formation of 3D electronic modules by laser radiation |
| title_short | Through-silicon-via formation of 3D electronic modules by laser radiation |
| title_sort | through silicon via formation of 3d electronic modules by laser radiation |
| topic | laser radiation silicon substrate hole taper coefficient thermal field simulation initial temperature |
| url | https://doklady.bsuir.by/jour/article/view/3078 |
| work_keys_str_mv | AT vllanin throughsiliconviaformationof3delectronicmodulesbylaserradiation AT vtpham throughsiliconviaformationof3delectronicmodulesbylaserradiation AT ailappo throughsiliconviaformationof3delectronicmodulesbylaserradiation |