Equivalent Circuit Model of the Carrier-Depletion-Based Push-Pull Silicon Optical Modulators With T-Rail Slow Wave Electrodes
The t-rail electrode is an effective method to enhance the silicon optoelectronic modulator's performance. To design and optimize T-rail electrodes, engineers often rely on finite-element numerical simulations that require complex device modeling and enormous computing resources. In this...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10598304/ |
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| author | Dongwei Zhuang Quanxin Na Qijie Xie Nan Zhang Lanxuan Zhang Xin Li Guomeng Zuo Hao Zhang Lei Wang Li Qin Junfeng Song |
| author_facet | Dongwei Zhuang Quanxin Na Qijie Xie Nan Zhang Lanxuan Zhang Xin Li Guomeng Zuo Hao Zhang Lei Wang Li Qin Junfeng Song |
| author_sort | Dongwei Zhuang |
| collection | DOAJ |
| description | The t-rail electrode is an effective method to enhance the silicon optoelectronic modulator's performance. To design and optimize T-rail electrodes, engineers often rely on finite-element numerical simulations that require complex device modeling and enormous computing resources. In this paper, we present an equivalent circuit model for carrier-depletion-based push-pull silicon modulators with T-rail electrodes. The analytical solution for the bandwidth of the modulator can be derived from the equivalent circuit. The utilization of the analytical solution offers advantages in terms of memory conservation and flexibility. The values calculated by the equivalent circuit model are in excellent agreement with the numerical full-wave HFSS simulations. Hence, the proposed model can accurately and efficiently develop silicon optical modulators. |
| format | Article |
| id | doaj-art-50c52734239a4bd59a778afce893ed1d |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-50c52734239a4bd59a778afce893ed1d2025-08-20T02:44:41ZengIEEEIEEE Photonics Journal1943-06552024-01-011641910.1109/JPHOT.2024.342783010598304Equivalent Circuit Model of the Carrier-Depletion-Based Push-Pull Silicon Optical Modulators With T-Rail Slow Wave ElectrodesDongwei Zhuang0Quanxin Na1https://orcid.org/0000-0001-9724-9651Qijie Xie2https://orcid.org/0000-0002-0492-7511Nan Zhang3https://orcid.org/0000-0002-4630-2229Lanxuan Zhang4Xin Li5https://orcid.org/0000-0002-3654-5825Guomeng Zuo6Hao Zhang7https://orcid.org/0000-0002-1392-9842Lei Wang8Li Qin9Junfeng Song10https://orcid.org/0000-0002-2079-7278State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, ChinaPeng Cheng Laboratory, Shenzhen, ChinaPeng Cheng Laboratory, Shenzhen, ChinaPeng Cheng Laboratory, Shenzhen, ChinaPeng Cheng Laboratory, Shenzhen, ChinaPeng Cheng Laboratory, Shenzhen, ChinaPeng Cheng Laboratory, Shenzhen, ChinaPeng Cheng Laboratory, Shenzhen, ChinaPeng Cheng Laboratory, Shenzhen, ChinaPeng Cheng Laboratory, Shenzhen, ChinaPeng Cheng Laboratory, Shenzhen, ChinaThe t-rail electrode is an effective method to enhance the silicon optoelectronic modulator's performance. To design and optimize T-rail electrodes, engineers often rely on finite-element numerical simulations that require complex device modeling and enormous computing resources. In this paper, we present an equivalent circuit model for carrier-depletion-based push-pull silicon modulators with T-rail electrodes. The analytical solution for the bandwidth of the modulator can be derived from the equivalent circuit. The utilization of the analytical solution offers advantages in terms of memory conservation and flexibility. The values calculated by the equivalent circuit model are in excellent agreement with the numerical full-wave HFSS simulations. Hence, the proposed model can accurately and efficiently develop silicon optical modulators.https://ieeexplore.ieee.org/document/10598304/Equivalent circuitsmicrowave propagationoptical communication equipmentoptical modulationtraveling wave devices |
| spellingShingle | Dongwei Zhuang Quanxin Na Qijie Xie Nan Zhang Lanxuan Zhang Xin Li Guomeng Zuo Hao Zhang Lei Wang Li Qin Junfeng Song Equivalent Circuit Model of the Carrier-Depletion-Based Push-Pull Silicon Optical Modulators With T-Rail Slow Wave Electrodes IEEE Photonics Journal Equivalent circuits microwave propagation optical communication equipment optical modulation traveling wave devices |
| title | Equivalent Circuit Model of the Carrier-Depletion-Based Push-Pull Silicon Optical Modulators With T-Rail Slow Wave Electrodes |
| title_full | Equivalent Circuit Model of the Carrier-Depletion-Based Push-Pull Silicon Optical Modulators With T-Rail Slow Wave Electrodes |
| title_fullStr | Equivalent Circuit Model of the Carrier-Depletion-Based Push-Pull Silicon Optical Modulators With T-Rail Slow Wave Electrodes |
| title_full_unstemmed | Equivalent Circuit Model of the Carrier-Depletion-Based Push-Pull Silicon Optical Modulators With T-Rail Slow Wave Electrodes |
| title_short | Equivalent Circuit Model of the Carrier-Depletion-Based Push-Pull Silicon Optical Modulators With T-Rail Slow Wave Electrodes |
| title_sort | equivalent circuit model of the carrier depletion based push pull silicon optical modulators with t rail slow wave electrodes |
| topic | Equivalent circuits microwave propagation optical communication equipment optical modulation traveling wave devices |
| url | https://ieeexplore.ieee.org/document/10598304/ |
| work_keys_str_mv | AT dongweizhuang equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT quanxinna equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT qijiexie equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT nanzhang equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT lanxuanzhang equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT xinli equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT guomengzuo equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT haozhang equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT leiwang equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT liqin equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes AT junfengsong equivalentcircuitmodelofthecarrierdepletionbasedpushpullsiliconopticalmodulatorswithtrailslowwaveelectrodes |