Guanine-based spin valve with spin rectification effect for an artificial memory element

Guanine-based spin valve with spin rectification effect for an artificial memory element

Non-volatile electronic memory elements are very attractive for applications, not only for information storage but also in logic circuits, sensing devices and neuromorphic computing. Here, a ferroelectric film of guanine nucleobase is used in a resistive memory junction sandwiched between two differ...

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Bibliographic Details
Main Authors: Nicusor Iacob, Cristina Chirila, Mama Sangaré, Andrei Kuncser, Anda E. Stanciu, Marcela Socol, Catalin C. Negrila, Mihaela Botea, Claudiu Locovei, Gabriel Schinteie, Aurelian C. Galca, Anca Stanculescu, Lucian Pintilie, Victor Kuncser, Bogdana Borca
Format: Article
Language:English
Published: Elsevier 2025-01-01
Series:Heliyon
Subjects:
Guanine nucleobase
Multiferroic junction
Organic ferroelectric
Spin valve
Electroresistance
Magnetoresistance
Online Access:http://www.sciencedirect.com/science/article/pii/S2405844024172027
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