Aromaticity‐Dependent Memristive Switching
Abstract In recent years, memristors have drawn attention as non‐volatile memory devices for advanced computing engineering. The features of memristors, such as hysteresis, high resistance state to low resistance state ratio, retention time, etc., are determined by the material, structure of the dev...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-05-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400654 |
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| author | Ewelina Cechosz Lulu Alluhaibi Tomasz Mazur Andrzej Sławek Nanjan Pandurangan Konrad Szaciłowski |
| author_facet | Ewelina Cechosz Lulu Alluhaibi Tomasz Mazur Andrzej Sławek Nanjan Pandurangan Konrad Szaciłowski |
| author_sort | Ewelina Cechosz |
| collection | DOAJ |
| description | Abstract In recent years, memristors have drawn attention as non‐volatile memory devices for advanced computing engineering. The features of memristors, such as hysteresis, high resistance state to low resistance state ratio, retention time, etc., are determined by the material, structure of the device, the switching mechanism, and the kinetics resulting from the characteristics of the materials. Here, a resistive switching is proposed based on the aromaticity change of the material. A device has been built based on tetracyclone that undergoes the transition from an antiaromatic to an aromatic state upon applied potential. This phenomenon results in the presence of two distinguishable, and more importantly, stable resistive states of the memristor. On the basis of theoretical and experimental investigation, it is demonstrated that the working principle of the device depends on the redox change of the molecules. This study provides the foundation for a new kind of memristive switching mechanism: the formation of virtual conductivity paths. They can be a key to improving the performance of semiconductor memory devices in crucial factors such as stability, reversibility, and nonvolatility because these paths are related to electron delocalization and do not involve any significant structural changes in the device (e.g., diffusion). |
| format | Article |
| id | doaj-art-4fe42e7dfb944a9a901c0db17e8a48fe |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-4fe42e7dfb944a9a901c0db17e8a48fe2025-08-20T02:26:27ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-05-01117n/an/a10.1002/aelm.202400654Aromaticity‐Dependent Memristive SwitchingEwelina Cechosz0Lulu Alluhaibi1Tomasz Mazur2Andrzej Sławek3Nanjan Pandurangan4Konrad Szaciłowski5Academic Centre for Materials and Nanotechnology AGH University of Krakow Kawiory 30 Kraków 30‐055 PolandNational Synchrotron Radiation Centre SOLARIS Jagiellonian University ul Czerwone Maki 98 Kraków 30‑392 PolandAcademic Centre for Materials and Nanotechnology AGH University of Krakow Kawiory 30 Kraków 30‐055 PolandAcademic Centre for Materials and Nanotechnology AGH University of Krakow Kawiory 30 Kraków 30‐055 PolandDepartment of Chemistry, Amrita School of Physical Sciences Amrita Vishwa Vidyapeetham Coimbatore Tamilnadu 643112 IndiaAcademic Centre for Materials and Nanotechnology AGH University of Krakow Kawiory 30 Kraków 30‐055 PolandAbstract In recent years, memristors have drawn attention as non‐volatile memory devices for advanced computing engineering. The features of memristors, such as hysteresis, high resistance state to low resistance state ratio, retention time, etc., are determined by the material, structure of the device, the switching mechanism, and the kinetics resulting from the characteristics of the materials. Here, a resistive switching is proposed based on the aromaticity change of the material. A device has been built based on tetracyclone that undergoes the transition from an antiaromatic to an aromatic state upon applied potential. This phenomenon results in the presence of two distinguishable, and more importantly, stable resistive states of the memristor. On the basis of theoretical and experimental investigation, it is demonstrated that the working principle of the device depends on the redox change of the molecules. This study provides the foundation for a new kind of memristive switching mechanism: the formation of virtual conductivity paths. They can be a key to improving the performance of semiconductor memory devices in crucial factors such as stability, reversibility, and nonvolatility because these paths are related to electron delocalization and do not involve any significant structural changes in the device (e.g., diffusion).https://doi.org/10.1002/aelm.202400654antiaromaticityaromaticitymemristorsresistive switchingtetracyclone |
| spellingShingle | Ewelina Cechosz Lulu Alluhaibi Tomasz Mazur Andrzej Sławek Nanjan Pandurangan Konrad Szaciłowski Aromaticity‐Dependent Memristive Switching Advanced Electronic Materials antiaromaticity aromaticity memristors resistive switching tetracyclone |
| title | Aromaticity‐Dependent Memristive Switching |
| title_full | Aromaticity‐Dependent Memristive Switching |
| title_fullStr | Aromaticity‐Dependent Memristive Switching |
| title_full_unstemmed | Aromaticity‐Dependent Memristive Switching |
| title_short | Aromaticity‐Dependent Memristive Switching |
| title_sort | aromaticity dependent memristive switching |
| topic | antiaromaticity aromaticity memristors resistive switching tetracyclone |
| url | https://doi.org/10.1002/aelm.202400654 |
| work_keys_str_mv | AT ewelinacechosz aromaticitydependentmemristiveswitching AT lulualluhaibi aromaticitydependentmemristiveswitching AT tomaszmazur aromaticitydependentmemristiveswitching AT andrzejsławek aromaticitydependentmemristiveswitching AT nanjanpandurangan aromaticitydependentmemristiveswitching AT konradszaciłowski aromaticitydependentmemristiveswitching |