Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS Detectors
Far-infrared(FIR) technology, spanning the infrared (IR) to terahertz (THz) range, has been limited by the lack of high-sensitivity detectors. Here, a complementary metal-oxide–semiconductor (CMOS) microbolometer with Ti/Si3N4/SiO2/Al metamaterial absorbers (MAs) is designed for the detec...
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| Format: | Article |
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IEEE
2025-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/11027144/ |
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| author | Tiantian Shi Wenbin Zhou Xiangze Liu Wei Si Zhangnan Li Yiming Liao Xiaoli Ji |
| author_facet | Tiantian Shi Wenbin Zhou Xiangze Liu Wei Si Zhangnan Li Yiming Liao Xiaoli Ji |
| author_sort | Tiantian Shi |
| collection | DOAJ |
| description | Far-infrared(FIR) technology, spanning the infrared (IR) to terahertz (THz) range, has been limited by the lack of high-sensitivity detectors. Here, a complementary metal-oxide–semiconductor (CMOS) microbolometer with Ti/Si3N4/SiO2/Al metamaterial absorbers (MAs) is designed for the detection range of 10-<inline-formula> <tex-math notation="LaTeX">$50~\mu $ </tex-math></inline-formula>m. The inverse design of the MAs is applied using binary coding and a staged genetic algorithm (SGA) to enhance efficiency and flexibility for ultra-broadband absorptivity. The optimal MA structure achieves an average absorptivity of 82% across the 10-<inline-formula> <tex-math notation="LaTeX">$50~\mu $ </tex-math></inline-formula>m range and shows excellent tolerance to polarization and incidence angle variations. Thermal simulations reveal that microbolometer with MAs achieves a 162.1% increase in maximum temperature rise. This research provides a performance-optimized and highly integrable solution for extending the detection range of CMOS-based FIR detectors, addressing key challenges in ultra-wideband photodetection across IR to THz wavelengths. |
| format | Article |
| id | doaj-art-4fdc0bac042f4207a6a3543bf665058a |
| institution | DOAJ |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj-art-4fdc0bac042f4207a6a3543bf665058a2025-08-20T03:15:35ZengIEEEIEEE Access2169-35362025-01-011311241711242710.1109/ACCESS.2025.357723711027144Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS DetectorsTiantian Shi0https://orcid.org/0009-0007-7314-010XWenbin Zhou1Xiangze Liu2Wei Si3Zhangnan Li4Yiming Liao5https://orcid.org/0000-0002-7043-5953Xiaoli Ji6https://orcid.org/0000-0002-5689-1215School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaSchool of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, ChinaSchool of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaFar-infrared(FIR) technology, spanning the infrared (IR) to terahertz (THz) range, has been limited by the lack of high-sensitivity detectors. Here, a complementary metal-oxide–semiconductor (CMOS) microbolometer with Ti/Si3N4/SiO2/Al metamaterial absorbers (MAs) is designed for the detection range of 10-<inline-formula> <tex-math notation="LaTeX">$50~\mu $ </tex-math></inline-formula>m. The inverse design of the MAs is applied using binary coding and a staged genetic algorithm (SGA) to enhance efficiency and flexibility for ultra-broadband absorptivity. The optimal MA structure achieves an average absorptivity of 82% across the 10-<inline-formula> <tex-math notation="LaTeX">$50~\mu $ </tex-math></inline-formula>m range and shows excellent tolerance to polarization and incidence angle variations. Thermal simulations reveal that microbolometer with MAs achieves a 162.1% increase in maximum temperature rise. This research provides a performance-optimized and highly integrable solution for extending the detection range of CMOS-based FIR detectors, addressing key challenges in ultra-wideband photodetection across IR to THz wavelengths.https://ieeexplore.ieee.org/document/11027144/Metamaterial absorbersultra-broadbandfar-infraredCMOS microbolometergenetic algorithm |
| spellingShingle | Tiantian Shi Wenbin Zhou Xiangze Liu Wei Si Zhangnan Li Yiming Liao Xiaoli Ji Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS Detectors IEEE Access Metamaterial absorbers ultra-broadband far-infrared CMOS microbolometer genetic algorithm |
| title | Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS Detectors |
| title_full | Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS Detectors |
| title_fullStr | Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS Detectors |
| title_full_unstemmed | Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS Detectors |
| title_short | Inverse Design of Metamaterial Absorbers for Far-Infrared CMOS Detectors |
| title_sort | inverse design of metamaterial absorbers for far infrared cmos detectors |
| topic | Metamaterial absorbers ultra-broadband far-infrared CMOS microbolometer genetic algorithm |
| url | https://ieeexplore.ieee.org/document/11027144/ |
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