Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructures
Abstract Van der Waals multiferroic structures hold promises for advancing the development of low-power multifunctional nanoelectronics devices, but single-phase two-dimensional multiferroic materials are limited. In this study, we constructed a room-temperature P(VDF-TrFE)/Fe3GaTe2 heterostructure...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-07-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-62159-1 |
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| author | Chuanyang Cai Yao Wen Lei Yin Ruiqing Cheng Hao Wang Xiaoqiang Feng Liang Liu Chao Jiang Jun He |
| author_facet | Chuanyang Cai Yao Wen Lei Yin Ruiqing Cheng Hao Wang Xiaoqiang Feng Liang Liu Chao Jiang Jun He |
| author_sort | Chuanyang Cai |
| collection | DOAJ |
| description | Abstract Van der Waals multiferroic structures hold promises for advancing the development of low-power multifunctional nanoelectronics devices, but single-phase two-dimensional multiferroic materials are limited. In this study, we constructed a room-temperature P(VDF-TrFE)/Fe3GaTe2 heterostructure (ferromagnetic layer thickness of 4.8 nm). and demonstrate significant bidirectional modulation of the Curie temperature upon application of ±90 V. Specifically, the Curie temperature decreased from 326 K to 247 K under +90 V and increased to 366 K under −90 V. Notably, we observed layer-dependent magnetic modulation, In 3-layer Fe3GaTe2, transitioning from negative to positive polarization increases Curie temperature, while thicker configurations show a decrease. This phenomenon originates from the competition between interlayer/intralayer magnetic exchange coupling driven by the electric field (density functional theory calculations), supporting non-volatile switching of the magnetization state, which is suitable for high-precision neural network computing. This discovery provides an innovative approach for developing low-power multifunctional nanoelectronics devices using two-dimensional magnetoelectric coupling structures. |
| format | Article |
| id | doaj-art-4fc25ec00d52491d94cddfc0d9a52dad |
| institution | DOAJ |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-4fc25ec00d52491d94cddfc0d9a52dad2025-08-20T03:05:10ZengNature PortfolioNature Communications2041-17232025-07-0116111310.1038/s41467-025-62159-1Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructuresChuanyang Cai0Yao Wen1Lei Yin2Ruiqing Cheng3Hao Wang4Xiaoqiang Feng5Liang Liu6Chao Jiang7Jun He8Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan UniversityKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan UniversityKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan UniversityKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan UniversityKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan UniversityKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan UniversitySchool of Physics, State Key Laboratory for Crystal Materials, Shandong UniversitySchool of Physics, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal UniversityKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan UniversityAbstract Van der Waals multiferroic structures hold promises for advancing the development of low-power multifunctional nanoelectronics devices, but single-phase two-dimensional multiferroic materials are limited. In this study, we constructed a room-temperature P(VDF-TrFE)/Fe3GaTe2 heterostructure (ferromagnetic layer thickness of 4.8 nm). and demonstrate significant bidirectional modulation of the Curie temperature upon application of ±90 V. Specifically, the Curie temperature decreased from 326 K to 247 K under +90 V and increased to 366 K under −90 V. Notably, we observed layer-dependent magnetic modulation, In 3-layer Fe3GaTe2, transitioning from negative to positive polarization increases Curie temperature, while thicker configurations show a decrease. This phenomenon originates from the competition between interlayer/intralayer magnetic exchange coupling driven by the electric field (density functional theory calculations), supporting non-volatile switching of the magnetization state, which is suitable for high-precision neural network computing. This discovery provides an innovative approach for developing low-power multifunctional nanoelectronics devices using two-dimensional magnetoelectric coupling structures.https://doi.org/10.1038/s41467-025-62159-1 |
| spellingShingle | Chuanyang Cai Yao Wen Lei Yin Ruiqing Cheng Hao Wang Xiaoqiang Feng Liang Liu Chao Jiang Jun He Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructures Nature Communications |
| title | Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructures |
| title_full | Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructures |
| title_fullStr | Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructures |
| title_full_unstemmed | Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructures |
| title_short | Non-volatile electric-field control of room-temperature ferromagnetism in Fe3GaTe2 heterostructures |
| title_sort | non volatile electric field control of room temperature ferromagnetism in fe3gate2 heterostructures |
| url | https://doi.org/10.1038/s41467-025-62159-1 |
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