Ultra-large nonlinear parameters and all-optical modulation of a transition metal dichalcogenides on silicon waveguide
Abstract We integrate monolayer TMDCs into silicon-on-insulation (SOI) waveguides and dielectric-loaded surface plasmon polariton (DLSPP) waveguides to enhance nonlinear parameters ( $$\gamma$$ ) of silicon-based waveguides. By optimizing the waveguide geometry, we have achieved significantly improv...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-83898-z |
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| Summary: | Abstract We integrate monolayer TMDCs into silicon-on-insulation (SOI) waveguides and dielectric-loaded surface plasmon polariton (DLSPP) waveguides to enhance nonlinear parameters ( $$\gamma$$ ) of silicon-based waveguides. By optimizing the waveguide geometry, we have achieved significantly improved $$\gamma$$ . In MoSe2-on-SOI and MoSe2-in-DLSPP waveguide with optimized geometry, the maximum $$\gamma$$ at the excitonic resonant peak ( $$\lambda$$ p) is 5001.87 W−1m−1 and 119111.94 W−1m−1 respectively for each case. Based on this, we designed all-optical TMDCs-on-SOI phase and extinction waveguide modulators, achieving $$\pi$$ -phase and 3 dB modulation with millimeter-scale modulation lengths under an optical pump intensity of 1 GW/ $$\textrm{cm}^{2}$$ at the optical communication wavelengths of 1310 nm and 1550 nm. At the $$\lambda$$ p of MoSe2, a modulation length of only 75 $$\upmu$$ m is required for $$\pi$$ -phase modulation, while a modulation length of 1.36 mm is sufficient for 3 dB modulation. Our work provides new insights for achieving miniaturized and low-power optical communication and networking applications. |
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| ISSN: | 2045-2322 |