Self-powered copper sulfide/silicon heterojunction photodetectors with high-photoresponse performance
Impressively high-photoresponse performance was observed from copper sulfide/silicon heterojunction photodetectors, which were fabricated by chemical vapor depositing (CVD) p-type copper sulfide (CuxS) thin films onto n-type Si substrates. This CVD technique, being facile, cost-effective, low-temper...
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| Format: | Article |
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AIP Publishing LLC
2025-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0268066 |
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| author | Der-Yuh Lin Yu-Tai Shih De-Jin Qiu Yee-Mou Kao Chia-Feng Lin Sheng-Beng Hwang Ming-Cheng Kao |
| author_facet | Der-Yuh Lin Yu-Tai Shih De-Jin Qiu Yee-Mou Kao Chia-Feng Lin Sheng-Beng Hwang Ming-Cheng Kao |
| author_sort | Der-Yuh Lin |
| collection | DOAJ |
| description | Impressively high-photoresponse performance was observed from copper sulfide/silicon heterojunction photodetectors, which were fabricated by chemical vapor depositing (CVD) p-type copper sulfide (CuxS) thin films onto n-type Si substrates. This CVD technique, being facile, cost-effective, low-temperature, and scalable, provides a reliable method for large-scale production. The CuxS films had desirable crystalline quality with a crystal structure of hexagonal covellite belonging to the P63/mmc space group. Temperature-dependent I–V measurements showed that the CuxS thin films behave as a degenerate semiconductor, and the p-CuxS/n-Si heterojunctions resembled a Schottky diode. The energy band diagrams of the p-CuxS/n-Si heterojunctions depicted a Schottky barrier of 1.52 eV and a built-in voltage of 1.27 V within the depletion region. The power conversion efficiency (PCE) of the p-CuxS/n-Si heterostructures was determined to be 2.52%. Thus, as photovoltaic devices, the PCE exceeded the reported values for CuO/Si, Cu2O/Si, and Cu2Se/Si systems. Analysis of the photoelectric properties showed that the p-CuxS/n-Si photodetectors have a good self-powered attribute, displaying rapid, reproducible, sensitive, and robust photoresponse performance. Furthermore, the Si substrate causes simplification in coupling with well-developed Si electronics. Thus, p-CuxS/n-Si heterojunction photodetectors are promising for applications in optoelectronics. |
| format | Article |
| id | doaj-art-4ed19fa38b854fa0a8d1b02fc85c1634 |
| institution | OA Journals |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-4ed19fa38b854fa0a8d1b02fc85c16342025-08-20T02:37:33ZengAIP Publishing LLCAPL Materials2166-532X2025-06-01136061120061120-1110.1063/5.0268066Self-powered copper sulfide/silicon heterojunction photodetectors with high-photoresponse performanceDer-Yuh Lin0Yu-Tai Shih1De-Jin Qiu2Yee-Mou Kao3Chia-Feng Lin4Sheng-Beng Hwang5Ming-Cheng Kao6Department of Electronic Engineering, National Changhua University of Education, Changhua 500208, TaiwanDepartment of Physics, National Changhua University of Education, Changhua 500207, TaiwanDepartment of Electronic Engineering, National Changhua University of Education, Changhua 500208, TaiwanDepartment of Physics, National Changhua University of Education, Changhua 500207, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, TaiwanDepartment of Electronic Engineering, Chienkuo Technology University, Changhua 500020, TaiwanDepartment of Information and Communication Engineering, College of Aviation, Chaoyang University of Technology, Taichung 413310, TaiwanImpressively high-photoresponse performance was observed from copper sulfide/silicon heterojunction photodetectors, which were fabricated by chemical vapor depositing (CVD) p-type copper sulfide (CuxS) thin films onto n-type Si substrates. This CVD technique, being facile, cost-effective, low-temperature, and scalable, provides a reliable method for large-scale production. The CuxS films had desirable crystalline quality with a crystal structure of hexagonal covellite belonging to the P63/mmc space group. Temperature-dependent I–V measurements showed that the CuxS thin films behave as a degenerate semiconductor, and the p-CuxS/n-Si heterojunctions resembled a Schottky diode. The energy band diagrams of the p-CuxS/n-Si heterojunctions depicted a Schottky barrier of 1.52 eV and a built-in voltage of 1.27 V within the depletion region. The power conversion efficiency (PCE) of the p-CuxS/n-Si heterostructures was determined to be 2.52%. Thus, as photovoltaic devices, the PCE exceeded the reported values for CuO/Si, Cu2O/Si, and Cu2Se/Si systems. Analysis of the photoelectric properties showed that the p-CuxS/n-Si photodetectors have a good self-powered attribute, displaying rapid, reproducible, sensitive, and robust photoresponse performance. Furthermore, the Si substrate causes simplification in coupling with well-developed Si electronics. Thus, p-CuxS/n-Si heterojunction photodetectors are promising for applications in optoelectronics.http://dx.doi.org/10.1063/5.0268066 |
| spellingShingle | Der-Yuh Lin Yu-Tai Shih De-Jin Qiu Yee-Mou Kao Chia-Feng Lin Sheng-Beng Hwang Ming-Cheng Kao Self-powered copper sulfide/silicon heterojunction photodetectors with high-photoresponse performance APL Materials |
| title | Self-powered copper sulfide/silicon heterojunction photodetectors with high-photoresponse performance |
| title_full | Self-powered copper sulfide/silicon heterojunction photodetectors with high-photoresponse performance |
| title_fullStr | Self-powered copper sulfide/silicon heterojunction photodetectors with high-photoresponse performance |
| title_full_unstemmed | Self-powered copper sulfide/silicon heterojunction photodetectors with high-photoresponse performance |
| title_short | Self-powered copper sulfide/silicon heterojunction photodetectors with high-photoresponse performance |
| title_sort | self powered copper sulfide silicon heterojunction photodetectors with high photoresponse performance |
| url | http://dx.doi.org/10.1063/5.0268066 |
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