Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes

Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes

This study clarifies the influence of single-layer (TiN, HfN, W) and bi-layer (HfN/TiN, W/TiN) bottom electrodes (BEs) on the ferroelectric performance and reliability of the 10-nm-thick Hf0.5Zr0.5O2 (HZO) thin films. A smaller thermal expansion coefficient in HfN or W imposes higher in-plane tensil...

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Bibliographic Details
Main Authors: Han Sol Park, Joong Chan Shin, Kyung Do Kim, Seong Jae Shin, Jae Hee Song, Seung Kyu Ryoo, In Soo Lee, Suk Hyun Lee, Hyunwoo Nam, Cheol Seong Hwang
Format: Article
Language:English
Published: Elsevier 2025-11-01
Series:Journal of Materiomics
Subjects:
Ferroelectric
Hf0.5Zr0.5O2
Coefficient of thermal expansion
Tensile stress
Bi-layer bottom electrode
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847825000991
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