Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes
This study clarifies the influence of single-layer (TiN, HfN, W) and bi-layer (HfN/TiN, W/TiN) bottom electrodes (BEs) on the ferroelectric performance and reliability of the 10-nm-thick Hf0.5Zr0.5O2 (HZO) thin films. A smaller thermal expansion coefficient in HfN or W imposes higher in-plane tensil...
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| Language: | English |
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Elsevier
2025-11-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847825000991 |
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| author | Han Sol Park Joong Chan Shin Kyung Do Kim Seong Jae Shin Jae Hee Song Seung Kyu Ryoo In Soo Lee Suk Hyun Lee Hyunwoo Nam Cheol Seong Hwang |
| author_facet | Han Sol Park Joong Chan Shin Kyung Do Kim Seong Jae Shin Jae Hee Song Seung Kyu Ryoo In Soo Lee Suk Hyun Lee Hyunwoo Nam Cheol Seong Hwang |
| author_sort | Han Sol Park |
| collection | DOAJ |
| description | This study clarifies the influence of single-layer (TiN, HfN, W) and bi-layer (HfN/TiN, W/TiN) bottom electrodes (BEs) on the ferroelectric performance and reliability of the 10-nm-thick Hf0.5Zr0.5O2 (HZO) thin films. A smaller thermal expansion coefficient in HfN or W imposes higher in-plane tensile stress on the HZO thin films, facilitating the polar orthorhombic (o-) phase fraction and enhancing remanent polarization (Pr). However, thicker interfacial layers formed when HfN or W single-layer BE and HZO contacted directly, leading to excessive leakage current and degraded ferroelectric performance. These excessive interfacial layers were effectively suppressed by inserting a thin (5 nm–20 nm) TiN layer on the HfN or W BEs. As a result, the HZO thin films on the HfN/TiN and W/TiN bi-layer BEs decrease the HZO grain size, facilitating the o-phase formation (increasing Pr) and lowering the film's coercive field. However, the higher surface roughness of the W/TiN bi-layer BEs induced excessive leakage current and reliability degradation. In contrast, the HfN BEs with a 10- or 20-nm-thick upper TiN layer lower the surface roughness of the BEs, thereby eliminating the adverse effects. As a result, the HfN 40 nm/TiN 10 nm/HZO/TiN stack exhibited enhanced ferroelectric performance up to 109 switching cycles with a lower cycling field of 2.7 MV/cm than the TiN 50 nm/HZO/TiN stack with a cycling field of 3.7 MV/cm. |
| format | Article |
| id | doaj-art-4ec4adbfdffa46f98a0357189450e570 |
| institution | Kabale University |
| issn | 2352-8478 |
| language | English |
| publishDate | 2025-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj-art-4ec4adbfdffa46f98a0357189450e5702025-08-23T04:48:43ZengElsevierJournal of Materiomics2352-84782025-11-0111610110910.1016/j.jmat.2025.101109Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodesHan Sol Park0Joong Chan Shin1Kyung Do Kim2Seong Jae Shin3Jae Hee Song4Seung Kyu Ryoo5In Soo Lee6Suk Hyun Lee7Hyunwoo Nam8Cheol Seong Hwang9Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaCorresponding author.; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaThis study clarifies the influence of single-layer (TiN, HfN, W) and bi-layer (HfN/TiN, W/TiN) bottom electrodes (BEs) on the ferroelectric performance and reliability of the 10-nm-thick Hf0.5Zr0.5O2 (HZO) thin films. A smaller thermal expansion coefficient in HfN or W imposes higher in-plane tensile stress on the HZO thin films, facilitating the polar orthorhombic (o-) phase fraction and enhancing remanent polarization (Pr). However, thicker interfacial layers formed when HfN or W single-layer BE and HZO contacted directly, leading to excessive leakage current and degraded ferroelectric performance. These excessive interfacial layers were effectively suppressed by inserting a thin (5 nm–20 nm) TiN layer on the HfN or W BEs. As a result, the HZO thin films on the HfN/TiN and W/TiN bi-layer BEs decrease the HZO grain size, facilitating the o-phase formation (increasing Pr) and lowering the film's coercive field. However, the higher surface roughness of the W/TiN bi-layer BEs induced excessive leakage current and reliability degradation. In contrast, the HfN BEs with a 10- or 20-nm-thick upper TiN layer lower the surface roughness of the BEs, thereby eliminating the adverse effects. As a result, the HfN 40 nm/TiN 10 nm/HZO/TiN stack exhibited enhanced ferroelectric performance up to 109 switching cycles with a lower cycling field of 2.7 MV/cm than the TiN 50 nm/HZO/TiN stack with a cycling field of 3.7 MV/cm.http://www.sciencedirect.com/science/article/pii/S2352847825000991FerroelectricHf0.5Zr0.5O2Coefficient of thermal expansionTensile stressBi-layer bottom electrode |
| spellingShingle | Han Sol Park Joong Chan Shin Kyung Do Kim Seong Jae Shin Jae Hee Song Seung Kyu Ryoo In Soo Lee Suk Hyun Lee Hyunwoo Nam Cheol Seong Hwang Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes Journal of Materiomics Ferroelectric Hf0.5Zr0.5O2 Coefficient of thermal expansion Tensile stress Bi-layer bottom electrode |
| title | Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes |
| title_full | Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes |
| title_fullStr | Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes |
| title_full_unstemmed | Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes |
| title_short | Enhancing ferroelectric properties of Hf0.5Zr0.5O2 thin films using the HfN/TiN and W/TiN bi-layer bottom electrodes |
| title_sort | enhancing ferroelectric properties of hf0 5zr0 5o2 thin films using the hfn tin and w tin bi layer bottom electrodes |
| topic | Ferroelectric Hf0.5Zr0.5O2 Coefficient of thermal expansion Tensile stress Bi-layer bottom electrode |
| url | http://www.sciencedirect.com/science/article/pii/S2352847825000991 |
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