Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells
Abstract Indium phosphide (InP) quantum dots (QDs) offer a promising alternative to (Restriction of Hazardous Substances) restricted cadmium‐based QDs, however, their performance is limited by surface defects and weak quantum confinement. This study introduces a novel approach to enhance the optical...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-04-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400708 |
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| author | Akihito Okamoto Shintaro Toda Takumi Tsujihata Takaki Kamada Maowei Huang Yusuke Hashimoto Seiichi Isojima Hirotake Kajii Satoshi Seino Tetsusei Kurashiki |
| author_facet | Akihito Okamoto Shintaro Toda Takumi Tsujihata Takaki Kamada Maowei Huang Yusuke Hashimoto Seiichi Isojima Hirotake Kajii Satoshi Seino Tetsusei Kurashiki |
| author_sort | Akihito Okamoto |
| collection | DOAJ |
| description | Abstract Indium phosphide (InP) quantum dots (QDs) offer a promising alternative to (Restriction of Hazardous Substances) restricted cadmium‐based QDs, however, their performance is limited by surface defects and weak quantum confinement. This study introduces a novel approach to enhance the optical properties of InP QDs through manganese (Mn) doping into the zinc selenide and zinc sulfide shell. This aims to expand the bandgap of the shells and adjust its lattice constant to better match the InP core. A comprehensive investigation of the effect of Mn‐doping concentration reveals that optimal properties are developed at a 10% feed ratio, resulting in improved crystallinity, reduced interfacial defects, and enhanced quantum confinement. X‐ray diffraction and transmission electron microscopy confirm the structural improvements and spectroscopic analyses demonstrate remarkable enhancement of optical properties. Notably, the photoluminescence quantum yield reaches 83% in the green emission region (λ ≈535 nm), a significant improvement over undoped QDs. Time‐resolved photoluminescence measurements indicate extended carrier lifetimes, supporting the effect of defect reduction. This strategy not only addresses the long‐standing challenges of InP QDs but also opens new avenues for designing high‐performance, environmentally friendly nanomaterials for various optoelectronic applications, including displays, lighting, and photovoltaics. |
| format | Article |
| id | doaj-art-4eb9281cf2754480a1efda9dc61a7d8f |
| institution | OA Journals |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-4eb9281cf2754480a1efda9dc61a7d8f2025-08-20T02:26:10ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-04-01127n/an/a10.1002/admi.202400708Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel ShellsAkihito Okamoto0Shintaro Toda1Takumi Tsujihata2Takaki Kamada3Maowei Huang4Yusuke Hashimoto5Seiichi Isojima6Hirotake Kajii7Satoshi Seino8Tetsusei Kurashiki9Graduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanULVAC‐Osaka University Joint Research Laboratory for Future Technology Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanProduct Planning Group Product Development Division Optical Electronics Operations Dai Nippon Printing Co.,Ltd. 642‐8, Mitsuugaki Kita‐ku Okayama 709‐2121 JapanProduct Planning Group Product Development Division Optical Electronics Operations Dai Nippon Printing Co.,Ltd. 642‐8, Mitsuugaki Kita‐ku Okayama 709‐2121 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanAbstract Indium phosphide (InP) quantum dots (QDs) offer a promising alternative to (Restriction of Hazardous Substances) restricted cadmium‐based QDs, however, their performance is limited by surface defects and weak quantum confinement. This study introduces a novel approach to enhance the optical properties of InP QDs through manganese (Mn) doping into the zinc selenide and zinc sulfide shell. This aims to expand the bandgap of the shells and adjust its lattice constant to better match the InP core. A comprehensive investigation of the effect of Mn‐doping concentration reveals that optimal properties are developed at a 10% feed ratio, resulting in improved crystallinity, reduced interfacial defects, and enhanced quantum confinement. X‐ray diffraction and transmission electron microscopy confirm the structural improvements and spectroscopic analyses demonstrate remarkable enhancement of optical properties. Notably, the photoluminescence quantum yield reaches 83% in the green emission region (λ ≈535 nm), a significant improvement over undoped QDs. Time‐resolved photoluminescence measurements indicate extended carrier lifetimes, supporting the effect of defect reduction. This strategy not only addresses the long‐standing challenges of InP QDs but also opens new avenues for designing high‐performance, environmentally friendly nanomaterials for various optoelectronic applications, including displays, lighting, and photovoltaics.https://doi.org/10.1002/admi.202400708core‐shell interfacedefect passivationmanganese dopingphotoluminescencequantum dots |
| spellingShingle | Akihito Okamoto Shintaro Toda Takumi Tsujihata Takaki Kamada Maowei Huang Yusuke Hashimoto Seiichi Isojima Hirotake Kajii Satoshi Seino Tetsusei Kurashiki Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells Advanced Materials Interfaces core‐shell interface defect passivation manganese doping photoluminescence quantum dots |
| title | Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells |
| title_full | Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells |
| title_fullStr | Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells |
| title_full_unstemmed | Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells |
| title_short | Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells |
| title_sort | enhanced optical properties of green emitting inp quantum dots with matched junctions of the core and mn doped novel shells |
| topic | core‐shell interface defect passivation manganese doping photoluminescence quantum dots |
| url | https://doi.org/10.1002/admi.202400708 |
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