Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells

Abstract Indium phosphide (InP) quantum dots (QDs) offer a promising alternative to (Restriction of Hazardous Substances) restricted cadmium‐based QDs, however, their performance is limited by surface defects and weak quantum confinement. This study introduces a novel approach to enhance the optical...

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Main Authors: Akihito Okamoto, Shintaro Toda, Takumi Tsujihata, Takaki Kamada, Maowei Huang, Yusuke Hashimoto, Seiichi Isojima, Hirotake Kajii, Satoshi Seino, Tetsusei Kurashiki
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Materials Interfaces
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Online Access:https://doi.org/10.1002/admi.202400708
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_version_ 1850151631774023680
author Akihito Okamoto
Shintaro Toda
Takumi Tsujihata
Takaki Kamada
Maowei Huang
Yusuke Hashimoto
Seiichi Isojima
Hirotake Kajii
Satoshi Seino
Tetsusei Kurashiki
author_facet Akihito Okamoto
Shintaro Toda
Takumi Tsujihata
Takaki Kamada
Maowei Huang
Yusuke Hashimoto
Seiichi Isojima
Hirotake Kajii
Satoshi Seino
Tetsusei Kurashiki
author_sort Akihito Okamoto
collection DOAJ
description Abstract Indium phosphide (InP) quantum dots (QDs) offer a promising alternative to (Restriction of Hazardous Substances) restricted cadmium‐based QDs, however, their performance is limited by surface defects and weak quantum confinement. This study introduces a novel approach to enhance the optical properties of InP QDs through manganese (Mn) doping into the zinc selenide and zinc sulfide shell. This aims to expand the bandgap of the shells and adjust its lattice constant to better match the InP core. A comprehensive investigation of the effect of Mn‐doping concentration reveals that optimal properties are developed at a 10% feed ratio, resulting in improved crystallinity, reduced interfacial defects, and enhanced quantum confinement. X‐ray diffraction and transmission electron microscopy confirm the structural improvements and spectroscopic analyses demonstrate remarkable enhancement of optical properties. Notably, the photoluminescence quantum yield reaches 83% in the green emission region (λ ≈535 nm), a significant improvement over undoped QDs. Time‐resolved photoluminescence measurements indicate extended carrier lifetimes, supporting the effect of defect reduction. This strategy not only addresses the long‐standing challenges of InP QDs but also opens new avenues for designing high‐performance, environmentally friendly nanomaterials for various optoelectronic applications, including displays, lighting, and photovoltaics.
format Article
id doaj-art-4eb9281cf2754480a1efda9dc61a7d8f
institution OA Journals
issn 2196-7350
language English
publishDate 2025-04-01
publisher Wiley-VCH
record_format Article
series Advanced Materials Interfaces
spelling doaj-art-4eb9281cf2754480a1efda9dc61a7d8f2025-08-20T02:26:10ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-04-01127n/an/a10.1002/admi.202400708Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel ShellsAkihito Okamoto0Shintaro Toda1Takumi Tsujihata2Takaki Kamada3Maowei Huang4Yusuke Hashimoto5Seiichi Isojima6Hirotake Kajii7Satoshi Seino8Tetsusei Kurashiki9Graduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanULVAC‐Osaka University Joint Research Laboratory for Future Technology Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanProduct Planning Group Product Development Division Optical Electronics Operations Dai Nippon Printing Co.,Ltd. 642‐8, Mitsuugaki Kita‐ku Okayama 709‐2121 JapanProduct Planning Group Product Development Division Optical Electronics Operations Dai Nippon Printing Co.,Ltd. 642‐8, Mitsuugaki Kita‐ku Okayama 709‐2121 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanGraduate School of Engineering Osaka University 2‐1, Yamadaoka Suita Osaka 565‐0871 JapanAbstract Indium phosphide (InP) quantum dots (QDs) offer a promising alternative to (Restriction of Hazardous Substances) restricted cadmium‐based QDs, however, their performance is limited by surface defects and weak quantum confinement. This study introduces a novel approach to enhance the optical properties of InP QDs through manganese (Mn) doping into the zinc selenide and zinc sulfide shell. This aims to expand the bandgap of the shells and adjust its lattice constant to better match the InP core. A comprehensive investigation of the effect of Mn‐doping concentration reveals that optimal properties are developed at a 10% feed ratio, resulting in improved crystallinity, reduced interfacial defects, and enhanced quantum confinement. X‐ray diffraction and transmission electron microscopy confirm the structural improvements and spectroscopic analyses demonstrate remarkable enhancement of optical properties. Notably, the photoluminescence quantum yield reaches 83% in the green emission region (λ ≈535 nm), a significant improvement over undoped QDs. Time‐resolved photoluminescence measurements indicate extended carrier lifetimes, supporting the effect of defect reduction. This strategy not only addresses the long‐standing challenges of InP QDs but also opens new avenues for designing high‐performance, environmentally friendly nanomaterials for various optoelectronic applications, including displays, lighting, and photovoltaics.https://doi.org/10.1002/admi.202400708core‐shell interfacedefect passivationmanganese dopingphotoluminescencequantum dots
spellingShingle Akihito Okamoto
Shintaro Toda
Takumi Tsujihata
Takaki Kamada
Maowei Huang
Yusuke Hashimoto
Seiichi Isojima
Hirotake Kajii
Satoshi Seino
Tetsusei Kurashiki
Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells
Advanced Materials Interfaces
core‐shell interface
defect passivation
manganese doping
photoluminescence
quantum dots
title Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells
title_full Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells
title_fullStr Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells
title_full_unstemmed Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells
title_short Enhanced Optical Properties of Green‐Emitting InP Quantum Dots with Matched Junctions of the Core and Mn‐Doped Novel Shells
title_sort enhanced optical properties of green emitting inp quantum dots with matched junctions of the core and mn doped novel shells
topic core‐shell interface
defect passivation
manganese doping
photoluminescence
quantum dots
url https://doi.org/10.1002/admi.202400708
work_keys_str_mv AT akihitookamoto enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells
AT shintarotoda enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells
AT takumitsujihata enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells
AT takakikamada enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells
AT maoweihuang enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells
AT yusukehashimoto enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells
AT seiichiisojima enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells
AT hirotakekajii enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells
AT satoshiseino enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells
AT tetsuseikurashiki enhancedopticalpropertiesofgreenemittinginpquantumdotswithmatchedjunctionsofthecoreandmndopednovelshells