The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions
X-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts of bismuth are presented. An equilibrium cooling and two phase technique for the deposition of the GaAs epitaxial layers on semi-insulating GaAs:Cr(100) substrates has been used.
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1987-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1987/58065 |
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