The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions
X-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts of bismuth are presented. An equilibrium cooling and two phase technique for the deposition of the GaAs epitaxial layers on semi-insulating GaAs:Cr(100) substrates has been used.
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
1987-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1987/58065 |
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| _version_ | 1850224600004165632 |
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| author | J. Kozlowski M. Panek M. Ratuszek M. Tlaczala |
| author_facet | J. Kozlowski M. Panek M. Ratuszek M. Tlaczala |
| author_sort | J. Kozlowski |
| collection | DOAJ |
| description | X-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts of
bismuth are presented. An equilibrium cooling and two phase technique for the deposition of the GaAs
epitaxial layers on semi-insulating GaAs:Cr(100) substrates has been used. |
| format | Article |
| id | doaj-art-4eb5bbe82cef4dcdbbaa7b4265d8113c |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1987-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-4eb5bbe82cef4dcdbbaa7b4265d8113c2025-08-20T02:05:35ZengWileyActive and Passive Electronic Components0882-75161563-50311987-01-0112422322910.1155/1987/58065The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi SolutionsJ. Kozlowski0M. Panek1M. Ratuszek2M. Tlaczala3Institute of Electron Technology Technical University of Wroclaw, Wroclaw 50-370, PolandInstitute of Electron Technology Technical University of Wroclaw, Wroclaw 50-370, PolandInstitute of Electron Technology Technical University of Wroclaw, Wroclaw 50-370, PolandInstitute of Electron Technology Technical University of Wroclaw, Wroclaw 50-370, PolandX-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts of bismuth are presented. An equilibrium cooling and two phase technique for the deposition of the GaAs epitaxial layers on semi-insulating GaAs:Cr(100) substrates has been used.http://dx.doi.org/10.1155/1987/58065 |
| spellingShingle | J. Kozlowski M. Panek M. Ratuszek M. Tlaczala The Growth and Assessment of GaAs Epitaxial Layers Obtained From Ga-As-Bi Solutions Active and Passive Electronic Components |
| title | The Growth and Assessment of GaAs Epitaxial Layers Obtained From
Ga-As-Bi Solutions |
| title_full | The Growth and Assessment of GaAs Epitaxial Layers Obtained From
Ga-As-Bi Solutions |
| title_fullStr | The Growth and Assessment of GaAs Epitaxial Layers Obtained From
Ga-As-Bi Solutions |
| title_full_unstemmed | The Growth and Assessment of GaAs Epitaxial Layers Obtained From
Ga-As-Bi Solutions |
| title_short | The Growth and Assessment of GaAs Epitaxial Layers Obtained From
Ga-As-Bi Solutions |
| title_sort | growth and assessment of gaas epitaxial layers obtained from ga as bi solutions |
| url | http://dx.doi.org/10.1155/1987/58065 |
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