Understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substrates
Carbon-Carbon composites with protective Silicon Carbide surface (C/C-SiC) are well-known for their exceptional heat and oxidation resistance. Reactive Melt Infiltration (RMI) is employed to impart oxidation resistance to these composites by transforming the carbon matrix surface into silicon carbid...
Saved in:
| Main Authors: | Manikanda Priya Prakasan, Tobias Schneider, Dietmar Koch |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-06-01
|
| Series: | Open Ceramics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666539525000343 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Electrically Active Defects in 3C, 4H, and 6H Silicon Carbide Polytypes: A Review
by: Ivana Capan
Published: (2025-03-01) -
Influence of Homoepitaxial Layer Thickness on Flatness and Chemical Mechanical Planarization Induced Scratches of 4H-Silicon Carbide Epi-Wafers
by: Chi-Hsiang Hsieh, et al.
Published: (2025-06-01) -
Setting the Emissivity of an Imaging Bolometer in the Surface Temperature Profile Measurement of SiC-Based MEMS Heaters
by: Reinoud Wolffenbuttel, et al.
Published: (2025-06-01) -
Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kV SiC MOSFETs Across Multiple Vendors and Generations
by: Shahid Makhdoom, et al.
Published: (2024-01-01) -
Evaluation of a silicon carbide P–N diode for thermal neutron detection in a radiotherapy LINAC
by: Martín Pérez, et al.
Published: (2025-08-01)