Understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substrates
Carbon-Carbon composites with protective Silicon Carbide surface (C/C-SiC) are well-known for their exceptional heat and oxidation resistance. Reactive Melt Infiltration (RMI) is employed to impart oxidation resistance to these composites by transforming the carbon matrix surface into silicon carbid...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-06-01
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| Series: | Open Ceramics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666539525000343 |
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| author | Manikanda Priya Prakasan Tobias Schneider Dietmar Koch |
| author_facet | Manikanda Priya Prakasan Tobias Schneider Dietmar Koch |
| author_sort | Manikanda Priya Prakasan |
| collection | DOAJ |
| description | Carbon-Carbon composites with protective Silicon Carbide surface (C/C-SiC) are well-known for their exceptional heat and oxidation resistance. Reactive Melt Infiltration (RMI) is employed to impart oxidation resistance to these composites by transforming the carbon matrix surface into silicon carbide. Successful infiltration yields dense-grey SiC, while unsuccessful process yields porous-green layer, compromising oxidation resistance and inducing high-temperature surface damage. Identifying the causes of failed siliconization and their influencing factors is crucial for enhancing high-temperature performance. This study proves that SiC formation from gas-phase reactions prior to silicon melting causes green surface layer. Through siliconization experiments and Thermogravimetric Analysis combined with Fourier Transform Infrared spectroscopy, these gaseous reactions are linked to the specific-surface characteristics of silicon powder used. Microstructural differences between gas and liquid reaction-formed SiC leads to the proposed four-step reaction pathway, explaining the formation of green SiC. These findings offer vital insights for optimizing the outcome of surface siliconization process. |
| format | Article |
| id | doaj-art-4d75cadd3e4246b7b4e5cb04fe991b3e |
| institution | Kabale University |
| issn | 2666-5395 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Open Ceramics |
| spelling | doaj-art-4d75cadd3e4246b7b4e5cb04fe991b3e2025-08-20T03:45:28ZengElsevierOpen Ceramics2666-53952025-06-012210076710.1016/j.oceram.2025.100767Understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substratesManikanda Priya Prakasan0Tobias Schneider1Dietmar Koch2Corresponding author.; Institute of Materials Resource Management, University of Augsburg, Am Technologiezentrum 8 86159 Augsburg, GermanyInstitute of Materials Resource Management, University of Augsburg, Am Technologiezentrum 8 86159 Augsburg, GermanyInstitute of Materials Resource Management, University of Augsburg, Am Technologiezentrum 8 86159 Augsburg, GermanyCarbon-Carbon composites with protective Silicon Carbide surface (C/C-SiC) are well-known for their exceptional heat and oxidation resistance. Reactive Melt Infiltration (RMI) is employed to impart oxidation resistance to these composites by transforming the carbon matrix surface into silicon carbide. Successful infiltration yields dense-grey SiC, while unsuccessful process yields porous-green layer, compromising oxidation resistance and inducing high-temperature surface damage. Identifying the causes of failed siliconization and their influencing factors is crucial for enhancing high-temperature performance. This study proves that SiC formation from gas-phase reactions prior to silicon melting causes green surface layer. Through siliconization experiments and Thermogravimetric Analysis combined with Fourier Transform Infrared spectroscopy, these gaseous reactions are linked to the specific-surface characteristics of silicon powder used. Microstructural differences between gas and liquid reaction-formed SiC leads to the proposed four-step reaction pathway, explaining the formation of green SiC. These findings offer vital insights for optimizing the outcome of surface siliconization process.http://www.sciencedirect.com/science/article/pii/S2666539525000343C/C-SiC compositeReactive Melt InfiltrationLiquid Silicon InfiltrationSurface siliconizationGas phase SiC formation |
| spellingShingle | Manikanda Priya Prakasan Tobias Schneider Dietmar Koch Understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substrates Open Ceramics C/C-SiC composite Reactive Melt Infiltration Liquid Silicon Infiltration Surface siliconization Gas phase SiC formation |
| title | Understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substrates |
| title_full | Understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substrates |
| title_fullStr | Understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substrates |
| title_full_unstemmed | Understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substrates |
| title_short | Understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substrates |
| title_sort | understanding the gas phase formation of silicon carbide during reactive melt infiltration of carbon substrates |
| topic | C/C-SiC composite Reactive Melt Infiltration Liquid Silicon Infiltration Surface siliconization Gas phase SiC formation |
| url | http://www.sciencedirect.com/science/article/pii/S2666539525000343 |
| work_keys_str_mv | AT manikandapriyaprakasan understandingthegasphaseformationofsiliconcarbideduringreactivemeltinfiltrationofcarbonsubstrates AT tobiasschneider understandingthegasphaseformationofsiliconcarbideduringreactivemeltinfiltrationofcarbonsubstrates AT dietmarkoch understandingthegasphaseformationofsiliconcarbideduringreactivemeltinfiltrationofcarbonsubstrates |