Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells
According to the classical theory, multi-quantum wells (MQWs) have quantum confinement effect on photo-generated carriers, which limits its application in light-to-electric devices. However, relevant experiments showed that a large proportion of photo-generated carriers can escape from MQWs sandwich...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10106420/ |
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| author | Ding Ding Weiye Liu Jiaping Guo Xinhui Tan Wei Zhang Lili Han Zhaowei Wang Weihua Gong Xiansheng Tang |
| author_facet | Ding Ding Weiye Liu Jiaping Guo Xinhui Tan Wei Zhang Lili Han Zhaowei Wang Weihua Gong Xiansheng Tang |
| author_sort | Ding Ding |
| collection | DOAJ |
| description | According to the classical theory, multi-quantum wells (MQWs) have quantum confinement effect on photo-generated carriers, which limits its application in light-to-electric devices. However, relevant experiments showed that a large proportion of photo-generated carriers can escape from MQWs sandwiched in the p-type layer and n-type layer (PIN structure), but not in the NIN structure. In order to study this phenomenon carefully, we applied positive and negative bias to an NIN structure respectively to simulate the PIN structure. By analyzing the photoluminescence (PL) spectra, we observed a weak escape behavior of photon-generated carriers among QWs in NIN structure. The experiment results indicate that strong electric field could drive carriers to escape from QWs rather than relaxation and recombination, while in NIN structure the inhomogeneous distribution of the electric field intensity reduces the carrier transport efficiency. The further study will give new ideas to design and produce photoelectric devices. |
| format | Article |
| id | doaj-art-4d723caebdbf49919ea46e4257e12d9e |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-4d723caebdbf49919ea46e4257e12d9e2025-08-20T02:41:52ZengIEEEIEEE Photonics Journal1943-06552023-01-011531410.1109/JPHOT.2023.326908210106420Study on the Quantum Confinement of Photo-Generated Carriers in Quantum WellsDing Ding0Weiye Liu1Jiaping Guo2Xinhui Tan3Wei Zhang4Lili Han5Zhaowei Wang6https://orcid.org/0009-0001-8728-2316Weihua Gong7Xiansheng Tang8https://orcid.org/0000-0002-7077-0006Laser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, ChinaLaser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, ChinaLaser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, ChinaLaser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, ChinaLaser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, ChinaLaser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, ChinaLaser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, ChinaLaser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, ChinaLaser Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan, ChinaAccording to the classical theory, multi-quantum wells (MQWs) have quantum confinement effect on photo-generated carriers, which limits its application in light-to-electric devices. However, relevant experiments showed that a large proportion of photo-generated carriers can escape from MQWs sandwiched in the p-type layer and n-type layer (PIN structure), but not in the NIN structure. In order to study this phenomenon carefully, we applied positive and negative bias to an NIN structure respectively to simulate the PIN structure. By analyzing the photoluminescence (PL) spectra, we observed a weak escape behavior of photon-generated carriers among QWs in NIN structure. The experiment results indicate that strong electric field could drive carriers to escape from QWs rather than relaxation and recombination, while in NIN structure the inhomogeneous distribution of the electric field intensity reduces the carrier transport efficiency. The further study will give new ideas to design and produce photoelectric devices.https://ieeexplore.ieee.org/document/10106420/Escapemulti-quantum wellsNIN structure |
| spellingShingle | Ding Ding Weiye Liu Jiaping Guo Xinhui Tan Wei Zhang Lili Han Zhaowei Wang Weihua Gong Xiansheng Tang Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells IEEE Photonics Journal Escape multi-quantum wells NIN structure |
| title | Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells |
| title_full | Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells |
| title_fullStr | Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells |
| title_full_unstemmed | Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells |
| title_short | Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells |
| title_sort | study on the quantum confinement of photo generated carriers in quantum wells |
| topic | Escape multi-quantum wells NIN structure |
| url | https://ieeexplore.ieee.org/document/10106420/ |
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