3 kV monolithic bidirectional GaN HEMT on sapphire

3 kV monolithic bidirectional GaN HEMT on sapphire

3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors was ∼20 Ω.mm (∼11 mΩ.cm ^2 ). The breakdown v...

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Bibliographic Details
Main Authors: Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
GaN HEMT
bidirectional transistor
wide bandgap
high electron mobility transistor
Online Access:https://doi.org/10.35848/1882-0786/ad9b6a
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