3 kV monolithic bidirectional GaN HEMT on sapphire
3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors was ∼20 Ω.mm (∼11 mΩ.cm ^2 ). The breakdown v...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ad9b6a |
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| author | Md Tahmidul Alam Swarnav Mukhopadhyay Md Mobinul Haque Shubhra S. Pasayat Chirag Gupta |
| author_facet | Md Tahmidul Alam Swarnav Mukhopadhyay Md Mobinul Haque Shubhra S. Pasayat Chirag Gupta |
| author_sort | Md Tahmidul Alam |
| collection | DOAJ |
| description | 3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors was ∼20 Ω.mm (∼11 mΩ.cm ^2 ). The breakdown voltage was optimized with two field plates on either side of the transistor. Shorter first field plate lengths (≤2 μm) resulted in higher breakdown voltage and the possible reason was discussed. The transistors had a steep subthreshold swing of 92 mV dec ^−1 . The fabricated transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage—on resistance, that showed crucial progress. |
| format | Article |
| id | doaj-art-4d6ccde566df4f0bacd063607069b9e5 |
| institution | DOAJ |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-4d6ccde566df4f0bacd063607069b9e52025-08-20T02:54:26ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101650110.35848/1882-0786/ad9b6a3 kV monolithic bidirectional GaN HEMT on sapphireMd Tahmidul Alam0https://orcid.org/0009-0008-6556-839XSwarnav Mukhopadhyay1Md Mobinul Haque2Shubhra S. Pasayat3Chirag Gupta4Department of Electrical and Computer Engineering, University of Wisconsin-Madison , WI 53706, United States of AmericaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison , WI 53706, United States of AmericaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison , WI 53706, United States of AmericaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison , WI 53706, United States of AmericaDepartment of Electrical and Computer Engineering, University of Wisconsin-Madison , WI 53706, United States of America3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors was ∼20 Ω.mm (∼11 mΩ.cm ^2 ). The breakdown voltage was optimized with two field plates on either side of the transistor. Shorter first field plate lengths (≤2 μm) resulted in higher breakdown voltage and the possible reason was discussed. The transistors had a steep subthreshold swing of 92 mV dec ^−1 . The fabricated transistor was benchmarked against the state-of-the-art monolithic bidirectional GaN HEMTs in the performance matrices of breakdown voltage—on resistance, that showed crucial progress.https://doi.org/10.35848/1882-0786/ad9b6aGaN HEMTbidirectional transistorwide bandgaphigh electron mobility transistor |
| spellingShingle | Md Tahmidul Alam Swarnav Mukhopadhyay Md Mobinul Haque Shubhra S. Pasayat Chirag Gupta 3 kV monolithic bidirectional GaN HEMT on sapphire Applied Physics Express GaN HEMT bidirectional transistor wide bandgap high electron mobility transistor |
| title | 3 kV monolithic bidirectional GaN HEMT on sapphire |
| title_full | 3 kV monolithic bidirectional GaN HEMT on sapphire |
| title_fullStr | 3 kV monolithic bidirectional GaN HEMT on sapphire |
| title_full_unstemmed | 3 kV monolithic bidirectional GaN HEMT on sapphire |
| title_short | 3 kV monolithic bidirectional GaN HEMT on sapphire |
| title_sort | 3 kv monolithic bidirectional gan hemt on sapphire |
| topic | GaN HEMT bidirectional transistor wide bandgap high electron mobility transistor |
| url | https://doi.org/10.35848/1882-0786/ad9b6a |
| work_keys_str_mv | AT mdtahmidulalam 3kvmonolithicbidirectionalganhemtonsapphire AT swarnavmukhopadhyay 3kvmonolithicbidirectionalganhemtonsapphire AT mdmobinulhaque 3kvmonolithicbidirectionalganhemtonsapphire AT shubhraspasayat 3kvmonolithicbidirectionalganhemtonsapphire AT chiraggupta 3kvmonolithicbidirectionalganhemtonsapphire |