Enhancing Stability and Emissions in Metal Halide Perovskite Nanocrystals Through Mn<sup>2</sup>⁺ Doping
Metal halide perovskite (MHP) nanocrystals (NCs) offer great potential for high-efficiency optoelectronic devices; however, they suffer from structural softness and chemical instability. Doping MHP NCs can overcome this issue. In this work, we synthesize Mn-doped methylammonium lead bromide (MAPbBr&...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/11/847 |
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| Summary: | Metal halide perovskite (MHP) nanocrystals (NCs) offer great potential for high-efficiency optoelectronic devices; however, they suffer from structural softness and chemical instability. Doping MHP NCs can overcome this issue. In this work, we synthesize Mn-doped methylammonium lead bromide (MAPbBr<sub>3</sub>) NCs using the ligand-assisted reprecipitation method and investigate their structural and optical stability. X-ray diffraction confirms Mn<sup>2</sup>⁺ substitution at Pb<sup>2</sup>⁺ sites and lattice contraction. Photoluminescence (PL) measurements show a blue shift, significant PL quantum yield enhancement, reaching 72% at 17% Mn<sup>2</sup>⁺ doping, and a 34% increase compared to undoped samples, attributed to effective defect passivation and reduced non-radiative recombination, supported by time-resolved PL data. Mn<sup>2</sup>⁺ doping also improves long-term stability under ambient conditions. Low-temperature PL reveals the crystal-phase transitions of perovskite NCs and Mn-doped NCs to be somewhat different than those of pure MAPbBr<sub>3</sub>. Mn<sup>2</sup>⁺ incorporation into perovskite promotes self-assembly into superlattices with larger crystal sizes, better structural order, and stronger inter-NC coupling. These results demonstrate that Mn<sup>2</sup>⁺ doping enhances both optical performance and structural robustness, advancing the potential of MAPbBr<sub>3</sub> NCs for stable optoelectronic applications. |
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| ISSN: | 2079-4991 |