Growing and polishing methods aiming at CVD diamond wafer over 10-inch
Flat-surfaced and large-size diamond wafers are essential for industrial applications, analogous to silicon (Si) wafers over 10-inch. A promising approach for the industrial-scale production of large-size diamond wafers involves chemical vapor deposition (CVD) techniques that generate large-area pla...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-12-01
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| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2025.2523762 |
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| Summary: | Flat-surfaced and large-size diamond wafers are essential for industrial applications, analogous to silicon (Si) wafers over 10-inch. A promising approach for the industrial-scale production of large-size diamond wafers involves chemical vapor deposition (CVD) techniques that generate large-area plasma. This article explores the growing and polishing methods aiming at CVD diamond wafers over 10-inch, based on our previous works and existing literature. The continuous growing strategy is proposed by combining radio frequency induction coupled plasma-enhanced CVD (RFICP CVD) and repositionable (or movable) substrate based on the Van der Drift growth mechanism. Molten iron erosion polishing (MIEP) is considered a method capable of polishing wafers over 10-inch due to its high material removal rate (MRR), size-unlimited, great stress-released, and damage-free characteristics. The proposed methodology lays the foundation for manufacturing flat-surfaced, large-sized diamond wafers for application-oriented purposes. |
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| ISSN: | 2694-1120 |