Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters
We have studied the 1.55 μm optical properties of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs quantum wells using a self-consistent calculation combined with the anticrossing model. We have found that the increase of injected carriers’ density induces the increase of optical gain and radiative current dens...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-01-01
|
| Series: | Journal of Nanotechnology |
| Online Access: | http://dx.doi.org/10.1155/2022/7971119 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832545843068010496 |
|---|---|
| author | I. Guizani C. Bilel Malak Alrowaili A. Rebey |
| author_facet | I. Guizani C. Bilel Malak Alrowaili A. Rebey |
| author_sort | I. Guizani |
| collection | DOAJ |
| description | We have studied the 1.55 μm optical properties of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs quantum wells using a self-consistent calculation combined with the anticrossing model. We have found that the increase of injected carriers’ density induces the increase of optical gain and radiative current density. The rise of doping density causes a blue shift of the fundamental transition energy accompanied with significant increase of optical gain. The quantum-confined Stark effect on radiative current density is also studied. The variation of radiative current as function of well width and Sb composition is also examined. In order to operate the emission wavelength at the optical fiber telecommunication domain, we have adjusted the well parameters of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs. |
| format | Article |
| id | doaj-art-4c391539db4a466fb3d82fbe5b3cfba3 |
| institution | Kabale University |
| issn | 1687-9511 |
| language | English |
| publishDate | 2022-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Nanotechnology |
| spelling | doaj-art-4c391539db4a466fb3d82fbe5b3cfba32025-02-03T07:24:26ZengWileyJournal of Nanotechnology1687-95112022-01-01202210.1155/2022/7971119Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells EmittersI. Guizani0C. Bilel1Malak Alrowaili2A. Rebey3Physics DepartmentPhysics DepartmentPhysics DepartmentPhysics DepartmentWe have studied the 1.55 μm optical properties of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs quantum wells using a self-consistent calculation combined with the anticrossing model. We have found that the increase of injected carriers’ density induces the increase of optical gain and radiative current density. The rise of doping density causes a blue shift of the fundamental transition energy accompanied with significant increase of optical gain. The quantum-confined Stark effect on radiative current density is also studied. The variation of radiative current as function of well width and Sb composition is also examined. In order to operate the emission wavelength at the optical fiber telecommunication domain, we have adjusted the well parameters of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs.http://dx.doi.org/10.1155/2022/7971119 |
| spellingShingle | I. Guizani C. Bilel Malak Alrowaili A. Rebey Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters Journal of Nanotechnology |
| title | Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters |
| title_full | Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters |
| title_fullStr | Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters |
| title_full_unstemmed | Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters |
| title_short | Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters |
| title_sort | optical investigation of p gaas i gan0 38yas1 1 38ysby n gaas quantum wells emitters |
| url | http://dx.doi.org/10.1155/2022/7971119 |
| work_keys_str_mv | AT iguizani opticalinvestigationofpgaasigan038yas1138ysbyngaasquantumwellsemitters AT cbilel opticalinvestigationofpgaasigan038yas1138ysbyngaasquantumwellsemitters AT malakalrowaili opticalinvestigationofpgaasigan038yas1138ysbyngaasquantumwellsemitters AT arebey opticalinvestigationofpgaasigan038yas1138ysbyngaasquantumwellsemitters |