Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes

Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes

We investigated the effects of different well shapes on the external quantum efficiency (EQE) and the efficiency droop in wide-well InGaN/GaN double-heterostructure light-emitting diodes. For forward current densities in the measurement range of greater than 135 A/cm2, the device featuring a trapezo...

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Bibliographic Details
Main Authors:	Ray-Ming Lin, Mu-Jen Lai, Liann-Be Chang, Chou-Hsiung Huang, Chang-Ho Chen
Format:	Article
Language:	English
Published:	Wiley 2012-01-01
Series:	International Journal of Photoenergy
Online Access:	http://dx.doi.org/10.1155/2012/917159
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