Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes
We investigated the effects of different well shapes on the external quantum efficiency (EQE) and the efficiency droop in wide-well InGaN/GaN double-heterostructure light-emitting diodes. For forward current densities in the measurement range of greater than 135 A/cm2, the device featuring a trapezo...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/917159 |
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| author | Ray-Ming Lin Mu-Jen Lai Liann-Be Chang Chou-Hsiung Huang Chang-Ho Chen |
| author_facet | Ray-Ming Lin Mu-Jen Lai Liann-Be Chang Chou-Hsiung Huang Chang-Ho Chen |
| author_sort | Ray-Ming Lin |
| collection | DOAJ |
| description | We investigated the effects of different well shapes on the external quantum efficiency (EQE) and the efficiency droop in wide-well InGaN/GaN double-heterostructure light-emitting diodes. For forward current densities in the measurement range of greater than 135 A/cm2, the device featuring a trapezoidal well exhibited improved EQEs and alleviative efficiency droop, relative to those of the device featuring a rectangular well. The decreased Auger loss has been proposed as the main reason for the greater maximum efficiency that occurred at high current density (>50 A/cm2). For the devices incorporating trapezoidal and rectangular wells, the EQEs at 200 A/cm2 decreased by 14 and 40%, respectively, from their maximum values, resulting in the EQE at a current density of 200 A/cm2 of the device featuring a trapezoidal well being 17.5% greater than that featuring a rectangular well. These results suggest that, in addition to the decreased Auger loss, the alleviation in efficiency droop at higher current densities might be due to higher internal quantum efficiency resulted from the improved carrier injection efficiency of the trapezoidal well. |
| format | Article |
| id | doaj-art-4c215fdc07404229b2ecf76c76408a91 |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-4c215fdc07404229b2ecf76c76408a912025-08-20T02:38:39ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/917159917159Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting DiodesRay-Ming Lin0Mu-Jen Lai1Liann-Be Chang2Chou-Hsiung Huang3Chang-Ho Chen4Graduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, TaiwanGraduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, TaiwanGraduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, TaiwanGraduate Institute of Electronic Engineering and Green Technology Research Center, Chang Gung University, Taoyuan 333, TaiwanMOME, Business Development Group, LED Division, Taoyuan 333, TaiwanWe investigated the effects of different well shapes on the external quantum efficiency (EQE) and the efficiency droop in wide-well InGaN/GaN double-heterostructure light-emitting diodes. For forward current densities in the measurement range of greater than 135 A/cm2, the device featuring a trapezoidal well exhibited improved EQEs and alleviative efficiency droop, relative to those of the device featuring a rectangular well. The decreased Auger loss has been proposed as the main reason for the greater maximum efficiency that occurred at high current density (>50 A/cm2). For the devices incorporating trapezoidal and rectangular wells, the EQEs at 200 A/cm2 decreased by 14 and 40%, respectively, from their maximum values, resulting in the EQE at a current density of 200 A/cm2 of the device featuring a trapezoidal well being 17.5% greater than that featuring a rectangular well. These results suggest that, in addition to the decreased Auger loss, the alleviation in efficiency droop at higher current densities might be due to higher internal quantum efficiency resulted from the improved carrier injection efficiency of the trapezoidal well.http://dx.doi.org/10.1155/2012/917159 |
| spellingShingle | Ray-Ming Lin Mu-Jen Lai Liann-Be Chang Chou-Hsiung Huang Chang-Ho Chen Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes International Journal of Photoenergy |
| title | Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes |
| title_full | Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes |
| title_fullStr | Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes |
| title_full_unstemmed | Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes |
| title_short | Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes |
| title_sort | effect of trapezoidal shaped well on efficiency droop in ingan based double heterostructure light emitting diodes |
| url | http://dx.doi.org/10.1155/2012/917159 |
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