SiC Double-Trench MOSFETs with an Integrated MOS-Channel Diode for Improved Third-Quadrant Performance
In this article, a novel double-trench SiC MOSFET with an integrated MOS-channel diode (MCD) is proposed and analyzed through TCAD simulations. The MCD incorporates a short channel, where the channel length can be adjusted by modifying the recess depth. Owing to the drain-induced barrier-lowering (D...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/3/244 |
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| Summary: | In this article, a novel double-trench SiC MOSFET with an integrated MOS-channel diode (MCD) is proposed and analyzed through TCAD simulations. The MCD incorporates a short channel, where the channel length can be adjusted by modifying the recess depth. Owing to the drain-induced barrier-lowering (DIBL) effect, a low potential barrier is created for electrons flowing from the JFET region to the N+ source region. This effectively eliminates the bipolar degradation of the parasitic body p-i-n diode and reduces the cut-in voltage <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>V</mi><mi>on</mi></msub></semantics></math></inline-formula> by 69.2%. Additionally, the breakdown voltage (BV) remains nearly unchanged. The reduction in the p-well region alleviates the JFET effect, successfully lowering the specific on-resistance <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>R</mi><mrow><mi>on</mi><mo>,</mo><mi>sp</mi></mrow></msub></semantics></math></inline-formula>, making the channel easier to turn on, and reducing the threshold voltage (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>V</mi><mi>th</mi></msub></semantics></math></inline-formula>). However, the increase in the gate charge <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>Q</mi><mi mathvariant="normal">g</mi></msub></semantics></math></inline-formula> results in a slight rise in the switching loss. |
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| ISSN: | 2072-666X |