Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy
In this work, we analyzed the effects of hot carrier injection in short-channel AlGaN/GaN high electron mobility transistors by identifying hot carrier stress conditions using electroluminescence (EL) spectroscopy. After applying hot carrier stress, degradation of the device parameters was observed....
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
The Korean Institute of Electromagnetic Engineering and Science
2025-03-01
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| Series: | Journal of Electromagnetic Engineering and Science |
| Subjects: | |
| Online Access: | https://www.jees.kr/upload/pdf/jees-2025-3-r-259.pdf |
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