Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy
In this work, we analyzed the effects of hot carrier injection in short-channel AlGaN/GaN high electron mobility transistors by identifying hot carrier stress conditions using electroluminescence (EL) spectroscopy. After applying hot carrier stress, degradation of the device parameters was observed....
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The Korean Institute of Electromagnetic Engineering and Science
2025-03-01
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| Series: | Journal of Electromagnetic Engineering and Science |
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| Online Access: | https://www.jees.kr/upload/pdf/jees-2025-3-r-259.pdf |
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| author | Junwoo Jung Jong-Min Lee Byoung-Gue Min Dong Min Kang Inho Kang Hyungtak Kim |
| author_facet | Junwoo Jung Jong-Min Lee Byoung-Gue Min Dong Min Kang Inho Kang Hyungtak Kim |
| author_sort | Junwoo Jung |
| collection | DOAJ |
| description | In this work, we analyzed the effects of hot carrier injection in short-channel AlGaN/GaN high electron mobility transistors by identifying hot carrier stress conditions using electroluminescence (EL) spectroscopy. After applying hot carrier stress, degradation of the device parameters was observed. This degradation worsened under conditions of peak EL signal intensity (VG = −3 V, VD = 40 V), which accelerated the generation of hot carriers. However, when the devices were subjected to on-state stress while maintaining the same power consumption as in hot carrier stress conditions, almost no degradation was detected. This suggests that the primary cause of degradation under hot carrier stress conditions is the continuous generation of hot carriers, which is accelerated by a high electric field. This further demonstrates the feasibility of using EL spectroscopy to identify conditions for the accelerated degradation of device parameters caused by hot carriers. |
| format | Article |
| id | doaj-art-4be3df2d0acd434f8a5726640b26058c |
| institution | DOAJ |
| issn | 2671-7255 2671-7263 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | The Korean Institute of Electromagnetic Engineering and Science |
| record_format | Article |
| series | Journal of Electromagnetic Engineering and Science |
| spelling | doaj-art-4be3df2d0acd434f8a5726640b26058c2025-08-20T03:07:55ZengThe Korean Institute of Electromagnetic Engineering and ScienceJournal of Electromagnetic Engineering and Science2671-72552671-72632025-03-0125218418910.26866/jees.2025.3.r.2593713Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence SpectroscopyJunwoo Jung0Jong-Min Lee1Byoung-Gue Min2Dong Min Kang3Inho Kang4Hyungtak Kim5 School of Electronic and Electrical Engineering, Hongik University, Seoul, Korea RF/Power Components Research Section, Electronic Telecommunications Research Institute (ETRI), Daejeon, Korea RF/Power Components Research Section, Electronic Telecommunications Research Institute (ETRI), Daejeon, Korea RF/Power Components Research Section, Electronic Telecommunications Research Institute (ETRI), Daejeon, Korea Power Semiconductor Research Center, Korea Electrotechnology Research Institute (KERI), Changwon, Korea School of Electronic and Electrical Engineering, Hongik University, Seoul, KoreaIn this work, we analyzed the effects of hot carrier injection in short-channel AlGaN/GaN high electron mobility transistors by identifying hot carrier stress conditions using electroluminescence (EL) spectroscopy. After applying hot carrier stress, degradation of the device parameters was observed. This degradation worsened under conditions of peak EL signal intensity (VG = −3 V, VD = 40 V), which accelerated the generation of hot carriers. However, when the devices were subjected to on-state stress while maintaining the same power consumption as in hot carrier stress conditions, almost no degradation was detected. This suggests that the primary cause of degradation under hot carrier stress conditions is the continuous generation of hot carriers, which is accelerated by a high electric field. This further demonstrates the feasibility of using EL spectroscopy to identify conditions for the accelerated degradation of device parameters caused by hot carriers.https://www.jees.kr/upload/pdf/jees-2025-3-r-259.pdfalgan/gan hemtsconstant voltage stresselectroluminescencehot carrier injectionreliability |
| spellingShingle | Junwoo Jung Jong-Min Lee Byoung-Gue Min Dong Min Kang Inho Kang Hyungtak Kim Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy Journal of Electromagnetic Engineering and Science algan/gan hemts constant voltage stress electroluminescence hot carrier injection reliability |
| title | Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy |
| title_full | Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy |
| title_fullStr | Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy |
| title_full_unstemmed | Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy |
| title_short | Analysis on Hot Carrier Injection of 0.15 μm Short-Channel AlGaN/GaN HEMTs Using Electroluminescence Spectroscopy |
| title_sort | analysis on hot carrier injection of 0 15 μm short channel algan gan hemts using electroluminescence spectroscopy |
| topic | algan/gan hemts constant voltage stress electroluminescence hot carrier injection reliability |
| url | https://www.jees.kr/upload/pdf/jees-2025-3-r-259.pdf |
| work_keys_str_mv | AT junwoojung analysisonhotcarrierinjectionof015mmshortchannelalganganhemtsusingelectroluminescencespectroscopy AT jongminlee analysisonhotcarrierinjectionof015mmshortchannelalganganhemtsusingelectroluminescencespectroscopy AT byoungguemin analysisonhotcarrierinjectionof015mmshortchannelalganganhemtsusingelectroluminescencespectroscopy AT dongminkang analysisonhotcarrierinjectionof015mmshortchannelalganganhemtsusingelectroluminescencespectroscopy AT inhokang analysisonhotcarrierinjectionof015mmshortchannelalganganhemtsusingelectroluminescencespectroscopy AT hyungtakkim analysisonhotcarrierinjectionof015mmshortchannelalganganhemtsusingelectroluminescencespectroscopy |