A Power-Type Single GaN-Based Blue LED With Improved Linearity for 3 Gb/s Free-Space VLC Without Pre-equalization
A new GaN light-emitting diode (LED) structure, which has a 300-nm aluminum-doped zinc oxide transparent current spreading layer epitaxial layer grown on a standard GaN LED epistack used in commercial GaN LED products, shows improved power vs. voltage (P-V) linearity and is suitable for high-data ra...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7470247/ |
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