A Power-Type Single GaN-Based Blue LED With Improved Linearity for 3 Gb/s Free-Space VLC Without Pre-equalization
A new GaN light-emitting diode (LED) structure, which has a 300-nm aluminum-doped zinc oxide transparent current spreading layer epitaxial layer grown on a standard GaN LED epistack used in commercial GaN LED products, shows improved power vs. voltage (P-V) linearity and is suitable for high-data ra...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7470247/ |
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| Summary: | A new GaN light-emitting diode (LED) structure, which has a 300-nm aluminum-doped zinc oxide transparent current spreading layer epitaxial layer grown on a standard GaN LED epistack used in commercial GaN LED products, shows improved power vs. voltage (P-V) linearity and is suitable for high-data rate visible light communication. Experimentally, a single GaN-based blue LED with a mesa diameter of 150 <inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$</tex-math></inline-formula> and a maximum optical power of 42 mW demonstrates a 3-Gb/s free-space data transmission speed. The modulation bandwidth reaches 600 MHz under the present experimental setup. The present work proves the practicability of enhancing the LED's free-space data transmission ability through a P-V linearity improvement at the chip level. |
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| ISSN: | 1943-0655 |