Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion

In order to simplify process procedure and improve conversion efficiency (η), we present new steps of laser opening and one-step POCl3 diffusion to fabricate selective emitter (SE) solar cells, in which heavily doped regions (HDR) and lightly doped regions (LDR) were formed simultaneously. For HDR,...

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Main Authors: Sheng-Shih Wang, Jyh-Jier Ho, Jia-Jhe Liou, Jia-Show Ho, Song-Yeu Tsai, Hsien-Seng Hung, Chi-Hsiao Yeh, Kang L. Wang
Format: Article
Language:English
Published: Wiley 2015-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2015/208270
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author Sheng-Shih Wang
Jyh-Jier Ho
Jia-Jhe Liou
Jia-Show Ho
Song-Yeu Tsai
Hsien-Seng Hung
Chi-Hsiao Yeh
Kang L. Wang
author_facet Sheng-Shih Wang
Jyh-Jier Ho
Jia-Jhe Liou
Jia-Show Ho
Song-Yeu Tsai
Hsien-Seng Hung
Chi-Hsiao Yeh
Kang L. Wang
author_sort Sheng-Shih Wang
collection DOAJ
description In order to simplify process procedure and improve conversion efficiency (η), we present new steps of laser opening and one-step POCl3 diffusion to fabricate selective emitter (SE) solar cells, in which heavily doped regions (HDR) and lightly doped regions (LDR) were formed simultaneously. For HDR, we divided six cells into two groups for POCl3 diffusion with sheet resistance (RS) of 40 Ω/sq (for group A) and 50 Ω/sq (for group B). The dry oxidation duration at a temperature of 850°C was 18, 25, and 35 min for the 3 different cells in each group. This created six SE samples with different RS pairings for the HDR and LDR. The optimal cell (sample SE2) with RS values of 40/81 Ω/Sq in HDR/LDR showed the best η of 16.20%, open circuit voltage (VOC) of 612.52 mV, and fill factor (FF) of 75.83%. The improvement ratios are 1.57% for η and 14.32% for external quantum efficiency (EQE) as compared with those of the two-step diffusion process of our previous study. Moreover, the one-step laser opening process and omitting the step of removing the damage caused by laser ablation especially reduce chemistry pollution, thus showing ecofriendly process for use in industrial-scale production.
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spelling doaj-art-4a9df251d7fe4ea48dcb908caf7e95752025-08-20T02:38:03ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/208270208270Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step DiffusionSheng-Shih Wang0Jyh-Jier Ho1Jia-Jhe Liou2Jia-Show Ho3Song-Yeu Tsai4Hsien-Seng Hung5Chi-Hsiao Yeh6Kang L. Wang7Department of Electrical Engineering, National Taiwan Ocean University, No. 2 Peining Road, Keelung 20224, TaiwanDepartment of Electrical Engineering, National Taiwan Ocean University, No. 2 Peining Road, Keelung 20224, TaiwanDepartment of Electrical Engineering, National Taiwan Ocean University, No. 2 Peining Road, Keelung 20224, TaiwanDepartment of Electrical Engineering, University of California, Los Angeles, CA 90095, USALaboratory of Green Energy & Environment Research, Industrial Technology Research Institute, Hsinchu 31061, TaiwanDepartment of Electrical Engineering, National Taiwan Ocean University, No. 2 Peining Road, Keelung 20224, TaiwanDepartment of Surgery, Chang Gung Memorial Hospital, Keelung 204, TaiwanDepartment of Electrical Engineering, University of California, Los Angeles, CA 90095, USAIn order to simplify process procedure and improve conversion efficiency (η), we present new steps of laser opening and one-step POCl3 diffusion to fabricate selective emitter (SE) solar cells, in which heavily doped regions (HDR) and lightly doped regions (LDR) were formed simultaneously. For HDR, we divided six cells into two groups for POCl3 diffusion with sheet resistance (RS) of 40 Ω/sq (for group A) and 50 Ω/sq (for group B). The dry oxidation duration at a temperature of 850°C was 18, 25, and 35 min for the 3 different cells in each group. This created six SE samples with different RS pairings for the HDR and LDR. The optimal cell (sample SE2) with RS values of 40/81 Ω/Sq in HDR/LDR showed the best η of 16.20%, open circuit voltage (VOC) of 612.52 mV, and fill factor (FF) of 75.83%. The improvement ratios are 1.57% for η and 14.32% for external quantum efficiency (EQE) as compared with those of the two-step diffusion process of our previous study. Moreover, the one-step laser opening process and omitting the step of removing the damage caused by laser ablation especially reduce chemistry pollution, thus showing ecofriendly process for use in industrial-scale production.http://dx.doi.org/10.1155/2015/208270
spellingShingle Sheng-Shih Wang
Jyh-Jier Ho
Jia-Jhe Liou
Jia-Show Ho
Song-Yeu Tsai
Hsien-Seng Hung
Chi-Hsiao Yeh
Kang L. Wang
Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion
International Journal of Photoenergy
title Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion
title_full Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion
title_fullStr Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion
title_full_unstemmed Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion
title_short Effects of Sheet Resistance on mc-Si Selective Emitter Solar Cells Using Laser Opening and One-Step Diffusion
title_sort effects of sheet resistance on mc si selective emitter solar cells using laser opening and one step diffusion
url http://dx.doi.org/10.1155/2015/208270
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