The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement

We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited ph...

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Bibliographic Details
Main Authors: Fulong Jiang, Yaying Liu, Menghan Liu, Ningze Zhuo, Peng Gao, Huajie Fang, Peng Chen, Bin Liu, Xiangqian Xiu, Zili Xie, Ping Han, Yi Shi, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
InGaN
Multiple Quantum Wells
polarization
efficiency droop.
Online Access:https://ieeexplore.ieee.org/document/8327824/
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