The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement
We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited ph...
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IEEE
2018-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8327824/ |
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| author | Fulong Jiang Yaying Liu Menghan Liu Ningze Zhuo Peng Gao Huajie Fang Peng Chen Bin Liu Xiangqian Xiu Zili Xie Ping Han Yi Shi Rong Zhang Youdou Zheng |
| author_facet | Fulong Jiang Yaying Liu Menghan Liu Ningze Zhuo Peng Gao Huajie Fang Peng Chen Bin Liu Xiangqian Xiu Zili Xie Ping Han Yi Shi Rong Zhang Youdou Zheng |
| author_sort | Fulong Jiang |
| collection | DOAJ |
| description | We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited photoluminescence measurement is performed by Ti-sapphire pulse laser with the maximal carrier density of 10<sup>20</sup> cm<sup>−3</sup>. Under such high carrier density, the conventional InGaN/GaN MQWs (C-MQWs) have an additional nonradiative loss of carriers and suffer from the efficiency droop effect, while slight droop behavior is observed in the SL-MQWs sample. The results show that the substitution of AlGaN/InGaN superlattices as quantum barriers can effectively suppress the droop behavior at highly excited condition. |
| format | Article |
| id | doaj-art-4a55f854a4624bd5a7b7bbf79dfcd1a9 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-4a55f854a4624bd5a7b7bbf79dfcd1a92025-08-20T03:32:57ZengIEEEIEEE Photonics Journal1943-06552018-01-011021910.1109/JPHOT.2018.28206928327824The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence MeasurementFulong Jiang0https://orcid.org/0000-0003-0211-9155Yaying Liu1Menghan Liu2Ningze Zhuo3Peng Gao4Huajie Fang5Peng Chen6https://orcid.org/0000-0003-1350-2053Bin Liu7Xiangqian Xiu8Zili Xie9Ping Han10https://orcid.org/0000-0001-9551-2305Yi Shi11Rong Zhang12Youdou Zheng13Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaWe have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited photoluminescence measurement is performed by Ti-sapphire pulse laser with the maximal carrier density of 10<sup>20</sup> cm<sup>−3</sup>. Under such high carrier density, the conventional InGaN/GaN MQWs (C-MQWs) have an additional nonradiative loss of carriers and suffer from the efficiency droop effect, while slight droop behavior is observed in the SL-MQWs sample. The results show that the substitution of AlGaN/InGaN superlattices as quantum barriers can effectively suppress the droop behavior at highly excited condition.https://ieeexplore.ieee.org/document/8327824/InGaNMultiple Quantum Wellspolarizationefficiency droop. |
| spellingShingle | Fulong Jiang Yaying Liu Menghan Liu Ningze Zhuo Peng Gao Huajie Fang Peng Chen Bin Liu Xiangqian Xiu Zili Xie Ping Han Yi Shi Rong Zhang Youdou Zheng The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement IEEE Photonics Journal InGaN Multiple Quantum Wells polarization efficiency droop. |
| title | The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement |
| title_full | The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement |
| title_fullStr | The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement |
| title_full_unstemmed | The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement |
| title_short | The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurement |
| title_sort | study on the droop effect in the ingan x002f algainn mqws with lattice matched algan x002f ingan superlattices barrier by highly excited photoluminescence measurement |
| topic | InGaN Multiple Quantum Wells polarization efficiency droop. |
| url | https://ieeexplore.ieee.org/document/8327824/ |
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