The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film
Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 ...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2012/651587 |
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| author | Accarat Chaoumead Youl-moon Sung Dong-Joo Kwak |
| author_facet | Accarat Chaoumead Youl-moon Sung Dong-Joo Kwak |
| author_sort | Accarat Chaoumead |
| collection | DOAJ |
| description | Transparent conductive titanium-doped indium oxide (ITiO) films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20~60 nm/min under the experimental conditions of 5~20 mTorr of gas pressure and 220~350 W of RF power. The lowest volume resistivity of 1.2×10−4 Ω-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of 1.2×10−4 Ω-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer. |
| format | Article |
| id | doaj-art-4a4f648105924dbb8c2a4d86f8b95f61 |
| institution | DOAJ |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-4a4f648105924dbb8c2a4d86f8b95f612025-08-20T03:20:12ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242012-01-01201210.1155/2012/651587651587The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin FilmAccarat Chaoumead0Youl-moon Sung1Dong-Joo Kwak2Department of Electrical Engineering, Kyungsung University, Busan 608-736, Republic of KoreaDepartment of Electrical Engineering, Kyungsung University, Busan 608-736, Republic of KoreaDepartment of Electrical Engineering, Kyungsung University, Busan 608-736, Republic of KoreaTransparent conductive titanium-doped indium oxide (ITiO) films were deposited on corning glass substrates by RF magnetron sputtering method. The effects of RF sputtering power and Ar gas pressure on the structural and electrical properties of the films were investigated experimentally, using a 2.5 wt% TiO2-doped In2O3 target. The deposition rate was in the range of around 20~60 nm/min under the experimental conditions of 5~20 mTorr of gas pressure and 220~350 W of RF power. The lowest volume resistivity of 1.2×10−4 Ω-cm and the average optical transmittance of 75% were obtained for the ITiO film, prepared at RF power of 300 W and Ar gas pressure of 15 mTorr. This volume resistivity of 1.2×10−4 Ω-cm is low enough as a transparent conducting layer in various electrooptical devices, and it is comparable with that of ITO or ZnO:Al conducting layer.http://dx.doi.org/10.1155/2012/651587 |
| spellingShingle | Accarat Chaoumead Youl-moon Sung Dong-Joo Kwak The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film Advances in Condensed Matter Physics |
| title | The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film |
| title_full | The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film |
| title_fullStr | The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film |
| title_full_unstemmed | The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film |
| title_short | The Effects of RF Sputtering Power and Gas Pressure on Structural and Electrical Properties of ITiO Thin Film |
| title_sort | effects of rf sputtering power and gas pressure on structural and electrical properties of itio thin film |
| url | http://dx.doi.org/10.1155/2012/651587 |
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