Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process
Nanoscale Gate-Recessed Channel (GRC) Fully Depleted- (FD-) SOI MOSFET device with a silicon channel thickness (tSi) as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K) for I-V characterizations. In spite of its FD-SOI nanoscale thi...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2015/609828 |
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| author | Avi Karsenty Avraham Chelly |
| author_facet | Avi Karsenty Avraham Chelly |
| author_sort | Avi Karsenty |
| collection | DOAJ |
| description | Nanoscale Gate-Recessed Channel (GRC) Fully Depleted- (FD-) SOI MOSFET device with a silicon channel thickness (tSi) as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K) for I-V characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL) effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature. |
| format | Article |
| id | doaj-art-4a268805fd864673a52ccce79768fc0d |
| institution | DOAJ |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-4a268805fd864673a52ccce79768fc0d2025-08-20T03:20:12ZengWileyActive and Passive Electronic Components0882-75161563-50312015-01-01201510.1155/2015/609828609828Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel ProcessAvi Karsenty0Avraham Chelly1Applied Physics/Electro-Optics Department, Faculty of Engineering, Lev Academic Center, 21 Havaad Haleumi Street, 9116001 Jerusalem, IsraelAdvanced Semiconductor Devices Lab, Faculty of Engineering, Bar-Ilan University, 52900 Ramat Gan, IsraelNanoscale Gate-Recessed Channel (GRC) Fully Depleted- (FD-) SOI MOSFET device with a silicon channel thickness (tSi) as low as 2.2 nm was first tested at room temperature for functionality check and then tested at low temperature (77 K) for I-V characterizations. In spite of its FD-SOI nanoscale thickness and long channel feature, the device has surprisingly exhibited a Drain-Induced Barrier Lowering (DIBL) effect at RT. However, this effect was suppressed at 77 K. If the apparition of such anomalous effect can be explained by a parasitic short channel transistor located at the edges of the channel, its suppression is explained by the decrease of the potential barrier between the drain and the channel when lowering the temperature.http://dx.doi.org/10.1155/2015/609828 |
| spellingShingle | Avi Karsenty Avraham Chelly Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process Active and Passive Electronic Components |
| title | Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process |
| title_full | Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process |
| title_fullStr | Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process |
| title_full_unstemmed | Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process |
| title_short | Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel Process |
| title_sort | anomalous dibl effect in fully depleted soi mosfets using nanoscale gate recessed channel process |
| url | http://dx.doi.org/10.1155/2015/609828 |
| work_keys_str_mv | AT avikarsenty anomalousdibleffectinfullydepletedsoimosfetsusingnanoscalegaterecessedchannelprocess AT avrahamchelly anomalousdibleffectinfullydepletedsoimosfetsusingnanoscalegaterecessedchannelprocess |