Million‐Atom Simulation of the Set Process in Phase Change Memories at the Real Device Scale
Abstract Phase change materials are exploited in several enabling technologies such as storage class memories, neuromorphic devices and memories embedded in microcontrollers. A key functional property for these applications is the fast crystal nucleation and growth in the supercool liquid phase. Ove...
Saved in:
| Main Authors: | Omar Abou El Kheir, Marco Bernasconi |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-08-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202500110 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Atomic Pathways of Crystal-to-Crystal Transitions and Electronic Origins of Resistive Switching in MnTe for Ultralow-Power Memory
by: Rui Wu, et al.
Published: (2025-01-01) -
GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices
by: Damien Térébénec, et al.
Published: (2025-02-01) -
Emerging horizons in phase-change materials for non-volatile memory
by: Yan Chen, et al.
Published: (2025-03-01) -
Microstructure characterization, phase transition, and device application of phase-change memory materials
by: Kai Jiang, et al.
Published: (2023-12-01) -
Inkjet‐Printed Phase Change Memory Devices
by: Hanglin He, et al.
Published: (2024-11-01)