Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations
The paper critically reviewes experimental data and their theoretical explanations related to the change in conductivity of the silicon structures arising from the adsorption of NO2 molecules. Our quantum-chemical calculations showes that the adsorption of molecules of nitric oxide on hydrogenated s...
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| Format: | Article |
| Language: | English |
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Sumy State University
2017-07-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04010.pdf |
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| _version_ | 1850181969765203968 |
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| author | F.A.В Ptashchenko |
| author_facet | F.A.В Ptashchenko |
| author_sort | F.A.В Ptashchenko |
| collection | DOAJ |
| description | The paper critically reviewes experimental data and their theoretical explanations related to the change in conductivity of the silicon structures arising from the adsorption of NO2 molecules. Our quantum-chemical calculations showes that the adsorption of molecules of nitric oxide on hydrogenated silicon surface can lead only to the effective destruction of the dimer N2O4. Reversible increase in the concentration of free holes can be explained by adsorption of NO2 molecules on the surface hydroxyl groups. |
| format | Article |
| id | doaj-art-495792dafcfc474dab54d081243f91cd |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2017-07-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-495792dafcfc474dab54d081243f91cd2025-08-20T02:17:46ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-07-019404010-104010-610.21272/jnep.9(4).04010Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio CalculationsF.A.В Ptashchenko0State University “Odessa Maritime Academy”, 8, Didrikhson Str., 65029 Odessa, UkraineThe paper critically reviewes experimental data and their theoretical explanations related to the change in conductivity of the silicon structures arising from the adsorption of NO2 molecules. Our quantum-chemical calculations showes that the adsorption of molecules of nitric oxide on hydrogenated silicon surface can lead only to the effective destruction of the dimer N2O4. Reversible increase in the concentration of free holes can be explained by adsorption of NO2 molecules on the surface hydroxyl groups.http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04010.pdfAb initio calculationsAdsorptionNO2Porous siliconSurface dopin |
| spellingShingle | F.A.В Ptashchenko Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations Журнал нано- та електронної фізики Ab initio calculations Adsorption NO2 Porous silicon Surface dopin |
| title | Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations |
| title_full | Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations |
| title_fullStr | Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations |
| title_full_unstemmed | Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations |
| title_short | Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations |
| title_sort | conductivity change of silicon structures in the atmosphere of nitric oxide ab initio calculations |
| topic | Ab initio calculations Adsorption NO2 Porous silicon Surface dopin |
| url | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04010.pdf |
| work_keys_str_mv | AT favptashchenko conductivitychangeofsiliconstructuresintheatmosphereofnitricoxideabinitiocalculations |