Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations

The paper critically reviewes experimental data and their theoretical explanations related to the change in conductivity of the silicon structures arising from the adsorption of NO2 molecules. Our quantum-chemical calculations showes that the adsorption of molecules of nitric oxide on hydrogenated s...

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Main Author: F.A.В Ptashchenko
Format: Article
Language:English
Published: Sumy State University 2017-07-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04010.pdf
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author F.A.В Ptashchenko
author_facet F.A.В Ptashchenko
author_sort F.A.В Ptashchenko
collection DOAJ
description The paper critically reviewes experimental data and their theoretical explanations related to the change in conductivity of the silicon structures arising from the adsorption of NO2 molecules. Our quantum-chemical calculations showes that the adsorption of molecules of nitric oxide on hydrogenated silicon surface can lead only to the effective destruction of the dimer N2O4. Reversible increase in the concentration of free holes can be explained by adsorption of NO2 molecules on the surface hydroxyl groups.
format Article
id doaj-art-495792dafcfc474dab54d081243f91cd
institution OA Journals
issn 2077-6772
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publishDate 2017-07-01
publisher Sumy State University
record_format Article
series Журнал нано- та електронної фізики
spelling doaj-art-495792dafcfc474dab54d081243f91cd2025-08-20T02:17:46ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-07-019404010-104010-610.21272/jnep.9(4).04010Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio CalculationsF.A.В Ptashchenko0State University “Odessa Maritime Academy”, 8, Didrikhson Str., 65029 Odessa, UkraineThe paper critically reviewes experimental data and their theoretical explanations related to the change in conductivity of the silicon structures arising from the adsorption of NO2 molecules. Our quantum-chemical calculations showes that the adsorption of molecules of nitric oxide on hydrogenated silicon surface can lead only to the effective destruction of the dimer N2O4. Reversible increase in the concentration of free holes can be explained by adsorption of NO2 molecules on the surface hydroxyl groups.http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04010.pdfAb initio calculationsAdsorptionNO2Porous siliconSurface dopin
spellingShingle F.A.В Ptashchenko
Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations
Журнал нано- та електронної фізики
Ab initio calculations
Adsorption
NO2
Porous silicon
Surface dopin
title Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations
title_full Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations
title_fullStr Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations
title_full_unstemmed Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations
title_short Conductivity Change of Silicon Structures in the Atmosphere of Nitric Oxide: Ab initio Calculations
title_sort conductivity change of silicon structures in the atmosphere of nitric oxide ab initio calculations
topic Ab initio calculations
Adsorption
NO2
Porous silicon
Surface dopin
url http://jnep.sumdu.edu.ua:8080/download/numbers/2017/4/articles/jnep_V9_04010.pdf
work_keys_str_mv AT favptashchenko conductivitychangeofsiliconstructuresintheatmosphereofnitricoxideabinitiocalculations