Electro–optic coupling modulation on persistent photoconductivity and memristive states in thin-film devices with MoOx/ZnO heterostructured electrodes
Persistent photoconductivity (PPC)-based devices that utilize light regulation for non-volatile memristors not only enable biological neural functions and integrate memory and computing capabilities, thereby eliminating energy consumption for signal conversion, but also mitigate Joule heating throug...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0262605 |
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| Summary: | Persistent photoconductivity (PPC)-based devices that utilize light regulation for non-volatile memristors not only enable biological neural functions and integrate memory and computing capabilities, thereby eliminating energy consumption for signal conversion, but also mitigate Joule heating through optical control, thus promising higher energy efficiency. However, the PPC-based devices are limited to write-only operations because the photoconductivity state cannot be erased by physical means, such as applied bias voltage. In this study, we introduced a concise thin-film device with an asymmetric MoOx/ZnO heterojunction electrode structure (HES) fabricated using an economical solution process. The PPC and memristive states of the HES device can be activated via photoexcitation to a high-conductivity state and subsequently erased or reactivated by modulating the applied voltage for read/write and erasure operations. This functionality enables potential applications in flash memory with switchable memory states, thereby addressing the limitations of PPC-based devices in write-only memory. The memristive mechanism in the HES device was investigated with respect to the charge reconfiguration at the asymmetric MoOx/ZnO type-II heterointerfaces. In practical applications, the programmatically electro-optic manipulation of the HES device for read/write and erasure operations, as well as its advancement in artificial neuron image processing, were demonstrated. The modulated PPC and memristive states observed from the HES device present a new pathway for future fabrication of next-generation information storage and non-volatile logic devices. |
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| ISSN: | 2166-532X |