Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs

Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs

The impact of substrate connection on dynamic-RON degradation of 650 V packaged GaN HEMTs is investigated in this work. A custom setup is used to characterize the Devices Under Test (DUTs) under both static off-state stress and continuous switching stress. For both conditions, the Floating Substrate...

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Bibliographic Details
Main Authors: M. Cioni, G. Giorgino, G. Cappellini, A. Chini, C. Miccoli, M.E. Castagna, A. Abbisogni, A. Contarino, F.A. Pizzardi, S. Smerzi, F. Iucolano
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Power Electronic Devices and Components
Subjects:
GaN HEMTs
Dynamic-RON
Substrate connection
Package
Buffer traps
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370425000082
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