Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs
The impact of substrate connection on dynamic-RON degradation of 650 V packaged GaN HEMTs is investigated in this work. A custom setup is used to characterize the Devices Under Test (DUTs) under both static off-state stress and continuous switching stress. For both conditions, the Floating Substrate...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370425000082 |
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