Polarization rotation in a ferroelectric BaTiO3 film through low-energy He-implantation
Domain engineering in ferroelectric thin films is crucial for next-generation microelectronic and photonic technologies. Here, a method is demonstrated to precisely control domain configurations in BaTiO3 thin films through low-energy He ion implantation. The approach transforms a mixed ferroelectri...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0253298 |
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