Ultrafast dynamics of electronic friction energy dissipation in defective semiconductor monolayer
Abstract Friction is the central cause for about 1/3 of the primary energy dissipation, severely impacting the performance limits of micro and nanoscale mechanical devices. Especially in two-dimensional semiconductor devices, electronic friction energy dissipation becomes particularly pronounced. Ho...
Saved in:
| Main Authors: | Rui Han, Shihong Chen, Chong Wang, Shuchun Huang, Haowen Xu, Zejun Sun, Huixian Liu, Jianbin Luo, Dameng Liu, Huan Liu |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-05-01
|
| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-59978-7 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
The mechanisms and applications of friction energy dissipation
by: Huan Liu, et al.
Published: (2022-08-01) -
Ultrafast Q-boosting in semiconductor metasurfaces
by: Yang Ziwei, et al.
Published: (2024-02-01) -
Onion-shell nuclei on monolayer MoS2 facilitate friction reduction
by: Haowen Luo, et al.
Published: (2025-07-01) -
Adhesion and friction patterns of CVD-grown monolayer flakes induced by vacancy-rich defect domains
by: Paolo Canepa, et al.
Published: (2025-01-01) -
Mechanically reliable and electronically uniform monolayer MoS2 by passivation and defect healing
by: Boran Kumral, et al.
Published: (2025-08-01)