Basic research on CVD single crystal diamond processing by UV nanosecond laser
ObjectivesChemical vapor deposition (CVD) diamond has excellent material properties and a wide range of application prospects, but due to its high hardness, brittleness and chemical inertness, microstructure processing on the surface and inside is extremely difficult. Based on the advantages of high...
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Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd.
2025-04-01
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| Series: | Jin'gangshi yu moliao moju gongcheng |
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| Online Access: | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2024.0097 |
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| author | Huabin ZHAN Kaixuan FENG Yupeng CHEN Jing LI Jiawei WEI Jianhui CHEN Qi HAO Changwei WAN Ni CHEN |
| author_facet | Huabin ZHAN Kaixuan FENG Yupeng CHEN Jing LI Jiawei WEI Jianhui CHEN Qi HAO Changwei WAN Ni CHEN |
| author_sort | Huabin ZHAN |
| collection | DOAJ |
| description | ObjectivesChemical vapor deposition (CVD) diamond has excellent material properties and a wide range of application prospects, but due to its high hardness, brittleness and chemical inertness, microstructure processing on the surface and inside is extremely difficult. Based on the advantages of high precision, high efficiency and easy automation of laser processing, this paper adopts the ultraviolet nanosecond laser for CVD single diamond etching, and combines the laser line etching energy model with the basic research on the law of laser processing and etching principle.MethodsA UV nanosecond laser is used to carry out basic research on the laws of laser processing and etching principle through the ablation threshold test, laser energy modeling and line etching test, scanning electron microscope observation and energy spectrum analysis test. The purpose of the ablation threshold test is to obtain a suitable range of processing parameters, set the laser scanning speed of 1 mm/s, the number of scans for 1 time, the laser repetition frequency range from 20 to 50 kHz with 10 kHz increment, and the laser power range from 1.2 to 12.0 W with 1.2 W increment, and observe the erosion situation by engraved lines. After obtaining a suitable range of processing parameters, a laser energy density model is established in which the main variables are laser power and scanning speed. Changes in the model are observed by varying different combinations of parameters, and the processing law is predicted and verified by combining with the actual line etching test. The test situation is mainly through the scanning electron microscope observation and record test data, one of the line etching groove of the internal and peripheral energy spectrum analysis, through the comparison of elemental changes and combined with the literature on the principle of ablation to carry out certain analysis. ResultsFrom the results of the ablation threshold test, when the laser repetition frequency is 20 kHz, the etching traces can be produced in the range of power 1.2-12.0 W, when the repetition frequency is 30 kHz, the etching traces start to be produced when the power is increased to 7.2 W, and when the repetition frequency is 40 and 50 kHz, the etching traces are not produced in the range of power 1.2-12.0 W, therefore, in order to obtain stable etching results, fixed the laser repetition frequency of 20 kHz in the subsequent line etching test. Therefore, in order to obtain stable etching results, the laser repetition frequency is fixed at 20 kHz in the subsequent line etching test, and the results of the line etching test can be seen from the side of the CVD diamond, the groove basically appears as a “V” shape, and in combination with the line etching model of the laser, the energy density of the laser shows a high distribution in the middle and low distribution around the edges, i.e., the center of the spot is high and the edges are low. Furthermore, the energy at the center of the spot is high, and the energy at the edge is low. In the one-factor test of power, when the power is 1.2, 3.0, 5.4, 10.8 W, the width of the line etching groove is 39.8, 39.8, 41.0, 38.8 μm, and the depth is 35.7, 41.1, 42.1, 57.2 μm, respectively, and the width and depth of the diamond line etching groove increase with the increase of the laser power. In the one-factor test of scanning speed, when the scanning speed is 3, 13, 21 and 29 mm/s, the widths of the wire-etched grooves are 39.5, 39.9, 35.6 and 26.3 μm, and the depths are 77.6, 37.9, 22.3 and 18.0 μm, and the widths as well as the depths of the grooves gradually decrease with the scanning speed increasing.The results of EDS analysis show that, compared with the unfinished area, the proportions of C elements in the grooves' interior, sidewalls and peripheral areas show a decrease in the proportion of C elements and an increase in the proportion of N and O elements compared to the unprocessed area, and they are nearly the same. Conclusions(1) Combined with the line etching energy model, the increase in power leads to an increase in the energy density of the laser, and at the same time, the peak energy increases, increasing the degree of ablation of the material, resulting in deepening the depth of the groove, in addition, when increasing the laser power, the height of the model increases more than the increase in the magnitude of the edges, and therefore it can be observed that the width and depth of the diamond line etching groove increases with the increase in laser power, but the impact on the depth is greater than the impact on the width phenomenon. Scanning speed increase leads to increase the spacing between individual laser pulses, the amount of superposition between the pulses and the superposition area decreases, making the energy at the superposition decreases, which leads to a reduction in the peak value of the energy at the superposition, in addition, the scanning speed increase also leads to the reduction of the number of laser pulses irradiated in the unit area, which, under the combined effect, reduces the depth of the wire etching groove. (2) EDS analysis shows that, compared with the unprocessed area, the C element content in the processed area is reduced, and the N and O element content is increased, so it can be initially judged that the mechanism of nanosecond laser processing of single-crystal diamond is the phase transformation of diamond at high temperatures, graphite oxidation, and sputtering of graphite and heterogeneous compounds. |
| format | Article |
| id | doaj-art-4844dd0eb76e43dd8b896d5e2813165f |
| institution | OA Journals |
| issn | 1006-852X |
| language | zho |
| publishDate | 2025-04-01 |
| publisher | Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd. |
| record_format | Article |
| series | Jin'gangshi yu moliao moju gongcheng |
| spelling | doaj-art-4844dd0eb76e43dd8b896d5e2813165f2025-08-20T01:54:07ZzhoZhengzhou Research Institute for Abrasives & Grinding Co., Ltd.Jin'gangshi yu moliao moju gongcheng1006-852X2025-04-0145220521310.13394/j.cnki.jgszz.2024.00972024-0097Basic research on CVD single crystal diamond processing by UV nanosecond laserHuabin ZHAN0Kaixuan FENG1Yupeng CHEN2Jing LI3Jiawei WEI4Jianhui CHEN5Qi HAO6Changwei WAN7Ni CHEN8The 16S1 Research Institute of China Electronic Technology Corporation, Hefei 230088, ChinaCollege of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaSINOMACH Diamond (Henan) Co., Ltd., Zhengzhou 450046, ChinaSINOMACH Diamond (Henan) Co., Ltd., Zhengzhou 450046, ChinaThe 16S1 Research Institute of China Electronic Technology Corporation, Hefei 230088, ChinaThe 16S1 Research Institute of China Electronic Technology Corporation, Hefei 230088, ChinaThe 16S1 Research Institute of China Electronic Technology Corporation, Hefei 230088, ChinaThe 16S1 Research Institute of China Electronic Technology Corporation, Hefei 230088, ChinaCollege of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaObjectivesChemical vapor deposition (CVD) diamond has excellent material properties and a wide range of application prospects, but due to its high hardness, brittleness and chemical inertness, microstructure processing on the surface and inside is extremely difficult. Based on the advantages of high precision, high efficiency and easy automation of laser processing, this paper adopts the ultraviolet nanosecond laser for CVD single diamond etching, and combines the laser line etching energy model with the basic research on the law of laser processing and etching principle.MethodsA UV nanosecond laser is used to carry out basic research on the laws of laser processing and etching principle through the ablation threshold test, laser energy modeling and line etching test, scanning electron microscope observation and energy spectrum analysis test. The purpose of the ablation threshold test is to obtain a suitable range of processing parameters, set the laser scanning speed of 1 mm/s, the number of scans for 1 time, the laser repetition frequency range from 20 to 50 kHz with 10 kHz increment, and the laser power range from 1.2 to 12.0 W with 1.2 W increment, and observe the erosion situation by engraved lines. After obtaining a suitable range of processing parameters, a laser energy density model is established in which the main variables are laser power and scanning speed. Changes in the model are observed by varying different combinations of parameters, and the processing law is predicted and verified by combining with the actual line etching test. The test situation is mainly through the scanning electron microscope observation and record test data, one of the line etching groove of the internal and peripheral energy spectrum analysis, through the comparison of elemental changes and combined with the literature on the principle of ablation to carry out certain analysis. ResultsFrom the results of the ablation threshold test, when the laser repetition frequency is 20 kHz, the etching traces can be produced in the range of power 1.2-12.0 W, when the repetition frequency is 30 kHz, the etching traces start to be produced when the power is increased to 7.2 W, and when the repetition frequency is 40 and 50 kHz, the etching traces are not produced in the range of power 1.2-12.0 W, therefore, in order to obtain stable etching results, fixed the laser repetition frequency of 20 kHz in the subsequent line etching test. Therefore, in order to obtain stable etching results, the laser repetition frequency is fixed at 20 kHz in the subsequent line etching test, and the results of the line etching test can be seen from the side of the CVD diamond, the groove basically appears as a “V” shape, and in combination with the line etching model of the laser, the energy density of the laser shows a high distribution in the middle and low distribution around the edges, i.e., the center of the spot is high and the edges are low. Furthermore, the energy at the center of the spot is high, and the energy at the edge is low. In the one-factor test of power, when the power is 1.2, 3.0, 5.4, 10.8 W, the width of the line etching groove is 39.8, 39.8, 41.0, 38.8 μm, and the depth is 35.7, 41.1, 42.1, 57.2 μm, respectively, and the width and depth of the diamond line etching groove increase with the increase of the laser power. In the one-factor test of scanning speed, when the scanning speed is 3, 13, 21 and 29 mm/s, the widths of the wire-etched grooves are 39.5, 39.9, 35.6 and 26.3 μm, and the depths are 77.6, 37.9, 22.3 and 18.0 μm, and the widths as well as the depths of the grooves gradually decrease with the scanning speed increasing.The results of EDS analysis show that, compared with the unfinished area, the proportions of C elements in the grooves' interior, sidewalls and peripheral areas show a decrease in the proportion of C elements and an increase in the proportion of N and O elements compared to the unprocessed area, and they are nearly the same. Conclusions(1) Combined with the line etching energy model, the increase in power leads to an increase in the energy density of the laser, and at the same time, the peak energy increases, increasing the degree of ablation of the material, resulting in deepening the depth of the groove, in addition, when increasing the laser power, the height of the model increases more than the increase in the magnitude of the edges, and therefore it can be observed that the width and depth of the diamond line etching groove increases with the increase in laser power, but the impact on the depth is greater than the impact on the width phenomenon. Scanning speed increase leads to increase the spacing between individual laser pulses, the amount of superposition between the pulses and the superposition area decreases, making the energy at the superposition decreases, which leads to a reduction in the peak value of the energy at the superposition, in addition, the scanning speed increase also leads to the reduction of the number of laser pulses irradiated in the unit area, which, under the combined effect, reduces the depth of the wire etching groove. (2) EDS analysis shows that, compared with the unprocessed area, the C element content in the processed area is reduced, and the N and O element content is increased, so it can be initially judged that the mechanism of nanosecond laser processing of single-crystal diamond is the phase transformation of diamond at high temperatures, graphite oxidation, and sputtering of graphite and heterogeneous compounds.http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2024.0097uv nanosecond lasersingle crystal diamondlaser etchingflat top laser |
| spellingShingle | Huabin ZHAN Kaixuan FENG Yupeng CHEN Jing LI Jiawei WEI Jianhui CHEN Qi HAO Changwei WAN Ni CHEN Basic research on CVD single crystal diamond processing by UV nanosecond laser Jin'gangshi yu moliao moju gongcheng uv nanosecond laser single crystal diamond laser etching flat top laser |
| title | Basic research on CVD single crystal diamond processing by UV nanosecond laser |
| title_full | Basic research on CVD single crystal diamond processing by UV nanosecond laser |
| title_fullStr | Basic research on CVD single crystal diamond processing by UV nanosecond laser |
| title_full_unstemmed | Basic research on CVD single crystal diamond processing by UV nanosecond laser |
| title_short | Basic research on CVD single crystal diamond processing by UV nanosecond laser |
| title_sort | basic research on cvd single crystal diamond processing by uv nanosecond laser |
| topic | uv nanosecond laser single crystal diamond laser etching flat top laser |
| url | http://www.jgszz.cn/article/doi/10.13394/j.cnki.jgszz.2024.0097 |
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