Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures
Abstract Heterostructures between 2D and 3D electron systems remain critically important in developing novel and efficient optoelectronic and electronic devices. In this study, a vertical heterojunction between monolayer MoS2 and bulk InSe was developed. This heterojunction exhibits a type-I band al...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-04-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00549-1 |
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| author | Michael A. Altvater Christopher E. Stevens Nicholas A. Pike Joshua R. Hendrickson Rahul Rao Sergiy Krylyuk Albert V. Davydov Deep Jariwala Ruth Pachter Michael Snure Nicholas R. Glavin |
| author_facet | Michael A. Altvater Christopher E. Stevens Nicholas A. Pike Joshua R. Hendrickson Rahul Rao Sergiy Krylyuk Albert V. Davydov Deep Jariwala Ruth Pachter Michael Snure Nicholas R. Glavin |
| author_sort | Michael A. Altvater |
| collection | DOAJ |
| description | Abstract Heterostructures between 2D and 3D electron systems remain critically important in developing novel and efficient optoelectronic and electronic devices. In this study, a vertical heterojunction between monolayer MoS2 and bulk InSe was developed. This heterojunction exhibits a type-I band alignment that facilitates rapid energy transfer from the wide bandgap MoS2 to the narrow bandgap InSe resulting in quenching of the MoS2 photoluminescence (PL) emission and enhancement of the A exciton emission in InSe. Temperature-dependent PL measurements of MoS2 on SiO2, MoS2 on InSe, and bare InSe revealed the critical role of defect trapping and electron-phonon coupling in the optical response of MoS2 on InSe. These results demonstrate that heterostructures combining monolayer MoS2 on bulk InSe, showing marked improvement relative to bare InSe, would be advantageous when incorporated into optoelectronic devices such as photodetectors, light emitters, and color converters and highlights the benefit of creating van der Waals (vdW) heterostructures with tailored properties. |
| format | Article |
| id | doaj-art-480fbb2474c84b7cbec8682af631dbe0 |
| institution | OA Journals |
| issn | 2397-7132 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj-art-480fbb2474c84b7cbec8682af631dbe02025-08-20T02:12:02ZengNature Portfolionpj 2D Materials and Applications2397-71322025-04-01911810.1038/s41699-025-00549-1Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructuresMichael A. Altvater0Christopher E. Stevens1Nicholas A. Pike2Joshua R. Hendrickson3Rahul Rao4Sergiy Krylyuk5Albert V. Davydov6Deep Jariwala7Ruth Pachter8Michael Snure9Nicholas R. Glavin10Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force BaseAir Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force BaseAir Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force BaseAir Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force BaseAir Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force BaseMaterials Science and Engineering Division, National Institute of Standards and TechnologyMaterials Science and Engineering Division, National Institute of Standards and TechnologyDepartment of Electrical and Systems Engineering, University of PennsylvaniaAir Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force BaseAir Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force BaseAir Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force BaseAbstract Heterostructures between 2D and 3D electron systems remain critically important in developing novel and efficient optoelectronic and electronic devices. In this study, a vertical heterojunction between monolayer MoS2 and bulk InSe was developed. This heterojunction exhibits a type-I band alignment that facilitates rapid energy transfer from the wide bandgap MoS2 to the narrow bandgap InSe resulting in quenching of the MoS2 photoluminescence (PL) emission and enhancement of the A exciton emission in InSe. Temperature-dependent PL measurements of MoS2 on SiO2, MoS2 on InSe, and bare InSe revealed the critical role of defect trapping and electron-phonon coupling in the optical response of MoS2 on InSe. These results demonstrate that heterostructures combining monolayer MoS2 on bulk InSe, showing marked improvement relative to bare InSe, would be advantageous when incorporated into optoelectronic devices such as photodetectors, light emitters, and color converters and highlights the benefit of creating van der Waals (vdW) heterostructures with tailored properties.https://doi.org/10.1038/s41699-025-00549-1 |
| spellingShingle | Michael A. Altvater Christopher E. Stevens Nicholas A. Pike Joshua R. Hendrickson Rahul Rao Sergiy Krylyuk Albert V. Davydov Deep Jariwala Ruth Pachter Michael Snure Nicholas R. Glavin Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures npj 2D Materials and Applications |
| title | Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures |
| title_full | Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures |
| title_fullStr | Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures |
| title_full_unstemmed | Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures |
| title_short | Efficient energy transfer and photoluminescence enhancement in 2D MoS2/bulk InSe van der Waals heterostructures |
| title_sort | efficient energy transfer and photoluminescence enhancement in 2d mos2 bulk inse van der waals heterostructures |
| url | https://doi.org/10.1038/s41699-025-00549-1 |
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