CRYSTAL PROPERTIES OF SILICON OBTAINED BY THERMOMIGRATION
The article presents research results of the crystal structure of the silicon regions, locally recrystallized in the process of thermomigration liquid silicon-aluminum areas of a silicon substrate. Selective etching of silicon is found that recrystallized in the channel, there are areas that have in...
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| Format: | Article |
| Language: | Russian |
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North Caucasus Federal University
2022-05-01
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| Series: | Вестник Северо-Кавказского федерального университета |
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| Online Access: | https://vestnikskfu.elpub.ru/jour/article/view/1034 |
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| author | Vladimir Lozovskij Leonid Lunin Boris Seredin Oleg Devitsky |
| author_facet | Vladimir Lozovskij Leonid Lunin Boris Seredin Oleg Devitsky |
| author_sort | Vladimir Lozovskij |
| collection | DOAJ |
| description | The article presents research results of the crystal structure of the silicon regions, locally recrystallized in the process of thermomigration liquid silicon-aluminum areas of a silicon substrate. Selective etching of silicon is found that recrystallized in the channel, there are areas that have increased defects. Determined that these areas are located at the surfaces of the substrate, the depth of these areas does not exceed the thickness of the liquid zone. Out defective areas, the channel has low densities of dislocations and a high degree of monocrystalline silicon. Using the methods of x-ray diffractometry and transmission electron microscopy high resolution revealed that on the border of the channel and the substrate are dislocation half-stitch, which lie in the surface layers of the front and back sides of the substrate. In recrystallized areas are detected the {311} - defects. |
| format | Article |
| id | doaj-art-48083057ceac4e4c81e4b7c267cfd4f4 |
| institution | DOAJ |
| issn | 2307-907X |
| language | Russian |
| publishDate | 2022-05-01 |
| publisher | North Caucasus Federal University |
| record_format | Article |
| series | Вестник Северо-Кавказского федерального университета |
| spelling | doaj-art-48083057ceac4e4c81e4b7c267cfd4f42025-08-20T03:19:16ZrusNorth Caucasus Federal UniversityВестник Северо-Кавказского федерального университета2307-907X2022-05-010324301032CRYSTAL PROPERTIES OF SILICON OBTAINED BY THERMOMIGRATIONVladimir Lozovskij0Leonid Lunin1Boris Seredin2Oleg Devitsky3Platov South-Russian state polytechnic university (NPI)North Caucasus Federal UnivercityPlatov South-Russian state polytechnic university (NPI)North Caucasus Federal UnivercityThe article presents research results of the crystal structure of the silicon regions, locally recrystallized in the process of thermomigration liquid silicon-aluminum areas of a silicon substrate. Selective etching of silicon is found that recrystallized in the channel, there are areas that have increased defects. Determined that these areas are located at the surfaces of the substrate, the depth of these areas does not exceed the thickness of the liquid zone. Out defective areas, the channel has low densities of dislocations and a high degree of monocrystalline silicon. Using the methods of x-ray diffractometry and transmission electron microscopy high resolution revealed that on the border of the channel and the substrate are dislocation half-stitch, which lie in the surface layers of the front and back sides of the substrate. In recrystallized areas are detected the {311} - defects.https://vestnikskfu.elpub.ru/jour/article/view/1034термомиграциякремнийподложкамонокристаллдислокациикремний-алюминиевая зонаthermomigrationsiliconsubstratemonocrystaldislocationsilicon-aluminum zone |
| spellingShingle | Vladimir Lozovskij Leonid Lunin Boris Seredin Oleg Devitsky CRYSTAL PROPERTIES OF SILICON OBTAINED BY THERMOMIGRATION Вестник Северо-Кавказского федерального университета термомиграция кремний подложка монокристалл дислокации кремний-алюминиевая зона thermomigration silicon substrate monocrystal dislocation silicon-aluminum zone |
| title | CRYSTAL PROPERTIES OF SILICON OBTAINED BY THERMOMIGRATION |
| title_full | CRYSTAL PROPERTIES OF SILICON OBTAINED BY THERMOMIGRATION |
| title_fullStr | CRYSTAL PROPERTIES OF SILICON OBTAINED BY THERMOMIGRATION |
| title_full_unstemmed | CRYSTAL PROPERTIES OF SILICON OBTAINED BY THERMOMIGRATION |
| title_short | CRYSTAL PROPERTIES OF SILICON OBTAINED BY THERMOMIGRATION |
| title_sort | crystal properties of silicon obtained by thermomigration |
| topic | термомиграция кремний подложка монокристалл дислокации кремний-алюминиевая зона thermomigration silicon substrate monocrystal dislocation silicon-aluminum zone |
| url | https://vestnikskfu.elpub.ru/jour/article/view/1034 |
| work_keys_str_mv | AT vladimirlozovskij crystalpropertiesofsiliconobtainedbythermomigration AT leonidlunin crystalpropertiesofsiliconobtainedbythermomigration AT borisseredin crystalpropertiesofsiliconobtainedbythermomigration AT olegdevitsky crystalpropertiesofsiliconobtainedbythermomigration |