Gate driver-in-panel circuit using low-temperature polycrystalline silicon and oxide TFTs with mitigated positive bias temperature stress

This study featured a driving circuit focused on enhancing the reliability of the gate driver-in-panel (GIP) circuit, exhibiting stable performance while leveraging the low off-current characteristics of oxide thin-film transistors (TFTs). Through the proposed design strategy, compared with existing...

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Bibliographic Details
Main Authors: Se Hwan Na, Seok Gyu Hong, Yong Seon Hwang, Jung Chul Kim, Juhn Suk Yoo, Hyun Jae Kim
Format: Article
Language:English
Published: Taylor & Francis Group 2025-06-01
Series:Journal of Information Display
Subjects:
Online Access:https://www.tandfonline.com/doi/10.1080/15980316.2025.2499613
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