Gate driver-in-panel circuit using low-temperature polycrystalline silicon and oxide TFTs with mitigated positive bias temperature stress
This study featured a driving circuit focused on enhancing the reliability of the gate driver-in-panel (GIP) circuit, exhibiting stable performance while leveraging the low off-current characteristics of oxide thin-film transistors (TFTs). Through the proposed design strategy, compared with existing...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-06-01
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| Series: | Journal of Information Display |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/15980316.2025.2499613 |
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